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EMB1428QSQE

Texas Instruments

EMB1428QSQE by Texas Instruments

EMB1428QSQE by Texas Instruments is a MOSFET gate driver with a supply voltage range of 4.5V to 5.5V, operating temperature from -40°C to 125°C, and AEC-Q100 screening for automotive applications. It features a half-bridge based interface IC type, square package shape with 48 terminals in chip carrier style, suitable for surface mount assembly at 0.5mm terminal pitch.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,798 parts In-Stock

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Digiode

USA . 4,175 parts In-Stock

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4,175

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Distributors (Availability)

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Native Components

USA . 230 parts In-Stock

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$0.756

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230

$0.756

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Northwest PG Solutions

USA . 1,306 parts In-Stock

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$0.832

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One Stop Electronics

USA . 847 parts In-Stock

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$4.500

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847

$4.500

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Parana Technologies

USA . 923 parts In-Stock

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$11.628

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$12.024

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923

$11.628

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$12.024

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DigiPath Technology Company

USA . 2,341 parts In-Stock

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$12.804

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ChromeModa Solutions

Germany . 1,252 parts In-Stock

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$13.065

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$10.713

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IDEA Electronic Components Group

UK . 109 parts In-Stock

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$13.065

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$12.412

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$11.758

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AZTECH Wire

Italy . 763 parts In-Stock

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$17.412

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Lixinc

USA . 3,766 parts In-Stock

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Corphita

USA . 2,827 parts In-Stock

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Overview

Unlock the power of precision and reliability with the EMB1428QSQE by Texas Instruments. As a leader in MOSFET Gate Drivers, Texas Instruments delivers top-notch quality and performance. Ideal for automotive applications, this versatile chip carrier offers a very thin profile, making it perfect for space-constrained designs. With a wide supply voltage range and AEC-Q100 screening level, the EMB1428QSQE ensures optimal operation even in extreme conditions. Enhance your projects with the unmatched value and efficiency that only Texas Instruments can provide.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology makes installation easier and more efficient compared to through-hole mounting.

Maximum Supply Voltage: 5.5 V

Can handle high supply voltages, making it suitable for a wide range of applications.

Screening Level: AEC-Q100

This level of screening ensures high reliability and quality, particularly important for automotive applications.

Package Shape: SQUARE

Square package shape allows for efficient use of space and easy integration into circuit layouts.

No. of Terminals: 48

Ample number of terminals for versatile connections and configurations.

Package Style: CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Combination of chip carrier, heat sink/slug, and very thin profile allows for effective heat dissipation and compact design.

Minimum Supply Voltage: 4.5 V

Low minimum supply voltage ensures compatibility with a wider range of power sources.

Maximum Operating Temperature: 125 °C

High maximum operating temperature tolerance enables reliable performance in demanding environmental conditions.

Minimum Operating Temperature: -40 °C

Wide temperature range ensures reliable operation in both extreme cold and hot conditions.

Terminal Position: QUAD

Quad terminal position provides flexibility in connections and allows for various circuit configurations.

Maximum Seated Height: 0.8 mm

Low seated height helps in space-constrained applications and enables compact device designs.

Width: 7 mm

Compact width allows for space-efficient placement on circuit boards.

Length: 7 mm

Compact length enables easy integration and placement within circuits.

Temperature Grade: AUTOMOTIVE

Designed to meet automotive industry standards for temperature performance and reliability.

Terminal Form: NO LEAD

No-lead terminal form provides improved reliability and durability compared to leaded components.

Nominal Supply Voltage: 5 V

Standard nominal supply voltage for compatibility with common power sources.

Terminal Pitch: 0.5 mm

Fine terminal pitch allows for precise connections and compact layout designs.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

Advanced half bridge-based MOSFET driver interface IC type for efficient and reliable control of MOSFET devices.

Technical Specifications

MOSFET Gate Drivers EMB1428QSQE attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

Interface IC Type:

JESD-30 Code:

S-XQCC-N48

Length:

7 mm

No. of Functions:

1

No. of Terminals:

48

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Screening Level:

AEC-Q100

Maximum Seated Height:

.8 mm

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

7 mm

Trade Compliance

EMB1428QSQE Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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