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EMB1412MYE

Texas Instruments

EMB1412MYE by Texas Instruments

EMB1412MYE by Texas Instruments is a MOSFET gate driver with a supply voltage range of 3.5V to 14V, ideal for automotive applications. It features a small outline package style, dual terminal position, and operates in temperatures from -40°C to 125°C. With surface mount capability and Gull Wing terminals, it offers reliable performance in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,759 parts In-Stock

1+ parts

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6,759

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Digiode

USA . 1,507 parts In-Stock

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1,507

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 41 parts In-Stock

1+ parts

$8.371

100+ parts

$777.406

1k+ parts

$7.534

10k+ parts

-

41

$8.371

$777.406

$7.534

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DigiPath Technology Company

USA . 2,307 parts In-Stock

1+ parts

$9.218

100+ parts

-

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2,307

$9.218

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AZTECH Wire

Italy . 852 parts In-Stock

1+ parts

$9.241

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852

$9.241

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ChromeModa Solutions

Germany . 5,733 parts In-Stock

1+ parts

$9.406

100+ parts

$7.713

1k+ parts

-

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5,733

$9.406

$7.713

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IDEA Electronic Components Group

UK . 27 parts In-Stock

1+ parts

$9.406

100+ parts

$8.936

1k+ parts

$8.465

10k+ parts

-

27

$9.406

$8.936

$8.465

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Native Components

USA . 768 parts In-Stock

1+ parts

$10.980

100+ parts

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768

$10.980

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Northwest PG Solutions

USA . 1,102 parts In-Stock

1+ parts

$12.078

100+ parts

$10.870

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1,102

$12.078

$10.870

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One Stop Electronics

USA . 836 parts In-Stock

1+ parts

$48.500

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836

$48.500

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Corphita

USA . 4,754 parts In-Stock

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4,754

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Overview

Enhance the performance and reliability of your electronic designs with the EMB1412MYE MOSFET Gate Driver by Texas Instruments. Crafted with precision and expertise, this innovative component offers unmatched quality and durability for a wide range of applications. From automotive to industrial settings, this driver delivers superior functionality and efficiency, ensuring seamless operation and optimal results. Experience the value and benefits of Texas Instruments' cutting-edge technology with the EMB1412MYE, and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package provides durability and protection for the internal components of the MOSFET gate driver, ensuring long-term reliability.

Surface Mount: YES

Being surface mountable makes installation easy and allows for compact design, making it suitable for tight spaces or PCB layouts.

Maximum Supply Voltage: 14 V

The high maximum supply voltage of 14V allows for compatibility with a wide range of power sources, making it versatile for different applications.

Minimum Supply Voltage: 3.5 V

The low minimum supply voltage requirement of 3.5V ensures efficient power consumption and operation even in low power scenarios.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this MOSFET gate driver can withstand high-temperature environments without compromising performance or reliability.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this MOSFET gate driver is built to meet the stringent requirements and standards of the automotive industry, ensuring reliable performance in automotive systems.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

The buffer or inverter based MOSFET driver interface IC type provides flexibility in driving MOSFETs, allowing for precise control and optimization of power efficiency in various circuit designs.

Technical Specifications

MOSFET Gate Drivers EMB1412MYE attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

JESD-30 Code:

S-PDSO-G8

Length:

3 mm

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage:

14 V

Minimum Supply Voltage:

3.5 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3 mm

Trade Compliance

EMB1412MYE Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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