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LMG1025QDEERQ1

Texas Instruments

LMG1025QDEERQ1 by Texas Instruments

LMG1025QDEERQ1 by Texas Instruments is a MOSFET gate driver with a max supply voltage of 5.25V and max output current of 7A, suitable for automotive applications. It operates in temperatures ranging from -40°C to 125°C, featuring a small outline package style with very thin profile and dual terminal position. The device is surface mountable and has a moisture sensitivity level of 2.

Median Price

$9.980

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 353 parts In-Stock

1+ parts

$7.727

100+ parts

$6.770

1k+ parts

$3.825

10k+ parts

-

353

$7.727

$6.770

$3.825

-

DigiKey

USA . 2,026 parts In-Stock

1+ parts

$9.980

100+ parts

$6.632

1k+ parts

$6.029

10k+ parts

$5.853

2,026

$9.980

$6.632

$6.029

$5.853

Mouser Electronics

USA . 2,162 parts In-Stock

1+ parts

$11.200

100+ parts

$7.490

1k+ parts

$6.900

10k+ parts

$6.640

2,162

$11.200

$7.490

$6.900

$6.640

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$3.205

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$3.205

-

-

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Digiode

USA . 1,895 parts In-Stock

1+ parts

$7.341

100+ parts

-

1k+ parts

-

10k+ parts

-

1,895

$7.341

-

-

-

Cyclops Electronics Ltd

UK . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

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20,000

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-

-

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Chip Stock

USA . 5,400 parts In-Stock

1+ parts

-

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5,400

-

-

-

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Vyrian

USA . 3,251 parts In-Stock

1+ parts

-

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3,251

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 5,069 parts In-Stock

1+ parts

$3.205

100+ parts

-

1k+ parts

-

10k+ parts

$3.141

5,069

$3.205

-

-

$3.141

Argo Parts USA

USA . 4,506 parts In-Stock

1+ parts

$3.205

100+ parts

-

1k+ parts

-

10k+ parts

-

4,506

$3.205

-

-

-

Netroflash

USA . 100 parts In-Stock

1+ parts

$3.205

100+ parts

-

1k+ parts

-

10k+ parts

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100

$3.205

-

-

-

Advanced Electronics

New Zealand . 300 parts In-Stock

1+ parts

$3.270

100+ parts

$3.270

1k+ parts

$3.270

10k+ parts

-

300

$3.270

$3.270

$3.270

-

Parana Technologies

USA . 299 parts In-Stock

1+ parts

$4.961

100+ parts

-

1k+ parts

$5.503

10k+ parts

-

299

$4.961

-

$5.503

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DigiPath Technology Company

USA . 2,341 parts In-Stock

1+ parts

$5.463

100+ parts

$5.026

1k+ parts

-

10k+ parts

-

2,341

$5.463

$5.026

-

-

IDEA Electronic Components Group

UK . 820 parts In-Stock

1+ parts

$5.574

100+ parts

-

1k+ parts

$5.017

10k+ parts

-

820

$5.574

-

$5.017

-

ChromeModa Solutions

Germany . 228 parts In-Stock

1+ parts

$5.574

100+ parts

$4.571

1k+ parts

-

10k+ parts

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228

$5.574

$4.571

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-

Semicontronic

India . 3,400 parts In-Stock

1+ parts

$6.570

100+ parts

$6.406

1k+ parts

$6.373

10k+ parts

-

3,400

$6.570

$6.406

$6.373

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Ampacity Inc.

Singapore . 3,379 parts In-Stock

1+ parts

$6.570

100+ parts

-

1k+ parts

-

10k+ parts

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3,379

$6.570

-

-

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Corphita

USA . 216 parts In-Stock

1+ parts

$6.954

100+ parts

-

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10k+ parts

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216

$6.954

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-

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Corohmni

South Africa . 1,009 parts In-Stock

1+ parts

$10.490

100+ parts

-

1k+ parts

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10k+ parts

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1,009

$10.490

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-

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Lixinc

USA . 6,851 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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6,851

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Overview

Elevate your automotive electronics with the LMG1025QDEERQ1 by Texas Instruments. This MOSFET gate driver delivers top-notch quality and reliability, backed by a trusted manufacturer. Ideal for a wide range of applications, this driver offers seamless integration, high performance, and precise control. With its compact design and superior features, customers can expect enhanced efficiency, durability, and overall value. Upgrade your systems with the LMG1025QDEERQ1 and experience unparalleled performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the gate driver.

Surface Mount: YES

Enables easy and efficient assembly on circuit boards.

Maximum Supply Voltage: 5.25 V

Can handle high supply voltages, ensuring reliability and performance in various applications.

Screening Level: AEC-Q100

Meets automotive industry standards for quality and reliability.

Package Shape: SQUARE

Optimizes space utilization and layout on the PCB.

No. of Terminals: 6

Provides sufficient connection points for interfacing with other components.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Enhances thermal performance and helps in space-constrained applications.

Minimum Supply Voltage: 4.75 V

Works effectively at low supply voltages, ensuring compatibility with different systems.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for challenging environments.

Minimum Operating Temperature: -40 °C

Performs reliably in cold climates or industrial settings with low temperatures.

Terminal Finish: MATTE TIN

Improves solderability and conductivity for stable connections.

Terminal Position: DUAL

Enhances flexibility in board layout and connectivity options.

Maximum Seated Height: 0.8 mm

Low profile design supports compact and slim device applications.

Width: 2 mm

Offers a compact form factor for space-constrained designs.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures appropriate heat exposure during assembly without damaging the components.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during the soldering process.

Length: 2 mm

Contributes to the overall small footprint of the gate driver.

Temperature Grade: AUTOMOTIVE

Suitable for automotive applications where temperature fluctuations are common.

Maximum Output Current: 7 A

Capable of delivering high currents, meeting the demands of power-hungry systems.

Terminal Form: NO LEAD

Lead-free design for environmentally friendly and RoHS compliant manufacturing.

Nominal Supply Voltage: 5 V

Operates efficiently at the standard 5V supply voltage commonly used in electronics.

Terminal Pitch: 0.65 mm

Fine pitch terminals enable high-density mounting on the circuit board.

Moisture Sensitivity Level (MSL): 2

Provides guidelines for proper handling and storage to prevent moisture damage.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

Offers flexibility in driving MOSFETs with buffer or inverter configurations for different applications.

Technical Specifications

MOSFET Gate Drivers LMG1025QDEERQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e3

Length:

2 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

7 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

.8 mm

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Trade Compliance

LMG1025QDEERQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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