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EMB1412MYX/NOPB

Texas Instruments

EMB1412MYX/NOPB by Texas Instruments

EMB1412MYX/NOPB by Texas Instruments is a MOSFET gate driver with a supply voltage range of 3.5V to 14V and operating temperature from -40°C to 125°C. It features a small outline package style, matte tin terminal finish, and gull wing terminal form. Ideal for automotive applications requiring high-temperature operation and precise control of MOSFETs in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,416 parts In-Stock

1+ parts

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7,416

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Digiode

USA . 2,280 parts In-Stock

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2,280

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 806 parts In-Stock

1+ parts

$1.333

100+ parts

-

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806

$1.333

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Northwest PG Solutions

USA . 1,058 parts In-Stock

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$1.467

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1,058

$1.467

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Parana Technologies

USA . 1,003 parts In-Stock

1+ parts

$5.098

100+ parts

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$5.680

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1,003

$5.098

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$5.680

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ChromeModa Solutions

Germany . 1,769 parts In-Stock

1+ parts

$5.728

100+ parts

$4.697

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1,769

$5.728

$4.697

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IDEA Electronic Components Group

UK . 1,239 parts In-Stock

1+ parts

$5.728

100+ parts

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$5.155

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1,239

$5.728

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$5.155

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AZTECH Wire

Italy . 783 parts In-Stock

1+ parts

$14.041

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783

$14.041

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One Stop Electronics

USA . 675 parts In-Stock

1+ parts

$47.500

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675

$47.500

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DigiPath Technology Company

USA . 1,314 parts In-Stock

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$5.164

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1,314

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$5.164

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Corphita

USA . 291 parts In-Stock

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291

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Overview

Upgrade your electronic designs with the EMB1412MYX/NOPB MOSFET Gate Driver by Texas Instruments. Crafted with precision and expertise, this high-quality product offers reliability and efficiency for a wide range of applications. From automotive to industrial, this versatile device provides exceptional performance and value. Experience seamless operation and enhanced functionality with the EMB1412MYX/NOPB, a game-changer in the world of MOSFET gate drivers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures that the gate driver is lightweight and durable, making it easy to handle and resistant to any environmental factors.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on PCBs, saving space and simplifying the manufacturing process.

Maximum Supply Voltage: 14 V

The high maximum supply voltage capability of 14V ensures that the gate driver can meet the power requirements of various applications, making it versatile and reliable.

Package Shape: SQUARE

The square package shape provides a compact and efficient design, allowing for easy integration into different system layouts.

No. of Terminals: 8

With 8 terminals, this gate driver offers flexibility in connecting to other components, enabling a wider range of circuit design possibilities.

Minimum Operating Temperature: -40 °C

The wide range of minimum operating temperature ensures that the gate driver can function reliably in extreme cold environments, making it suitable for diverse applications.

Nominal Supply Voltage: 12 V

The nominal supply voltage of 12V aligns with common power sources, ensuring compatibility and ease of integration into existing systems.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

The buffer or inverter based MOSFET driver interface IC type provides versatility in driving MOSFETs, enabling efficient control and management of power circuits.

Technical Specifications

MOSFET Gate Drivers EMB1412MYX/NOPB attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage:

14 V

Minimum Supply Voltage:

3.5 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

EMB1412MYX/NOPB Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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