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EMB1412MYX

Texas Instruments

EMB1412MYX by Texas Instruments

EMB1412MYX by Texas Instruments is a MOSFET gate driver with a max supply voltage of 14V and min of 3.5V. It operates in temperatures ranging from -40 to 125°C, making it suitable for automotive applications. With a small outline package style and dual terminals, it offers precise control for various electronic systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,448 parts In-Stock

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9,448

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Digiode

USA . 378 parts In-Stock

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378

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Distributors (Availability)

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Native Components

USA . 331 parts In-Stock

1+ parts

$0.883

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331

$0.883

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Northwest PG Solutions

USA . 93 parts In-Stock

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$0.972

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93

$0.972

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Parana Technologies

USA . 1,995 parts In-Stock

1+ parts

$3.031

100+ parts

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$3.543

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1,995

$3.031

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$3.543

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ChromeModa Solutions

Germany . 3,683 parts In-Stock

1+ parts

$3.406

100+ parts

$2.793

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3,683

$3.406

$2.793

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IDEA Electronic Components Group

UK . 2,319 parts In-Stock

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$3.406

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$3.065

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2,319

$3.406

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$3.065

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One Stop Electronics

USA . 447 parts In-Stock

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$4.500

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447

$4.500

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AZTECH Wire

Italy . 624 parts In-Stock

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$15.109

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624

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Corphita

USA . 4,107 parts In-Stock

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DigiPath Technology Company

USA . 1,203 parts In-Stock

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$3.071

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1,203

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$3.071

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Overview

Unleash the power of cutting-edge technology with the EMB1412MYX MOSFET Gate Driver from Texas Instruments. Crafted with precision and expertise, this driver offers unparalleled performance and reliability for a wide range of applications. Whether you're in the automotive industry or working on industrial automation projects, this driver is your go-to solution. With a compact design and high-quality materials, the EMB1412MYX delivers exceptional value and efficiency, making it a must-have for customers who demand the best. Elevate your projects to the next level with the EMB1412MYX and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protects the internal components of the MOSFET Gate Driver, making it suitable for various applications.

Surface Mount: YES

Being surface mountable makes the installation process easier and more convenient, especially in compact electronic designs.

Maximum Supply Voltage: 14 V

With a high maximum supply voltage, this MOSFET Gate Driver can handle different voltage requirements in a circuit, providing flexibility and versatility.

Package Shape: SQUARE

The square shape of the package allows for easier mounting and placement on circuit boards, optimizing space efficiency.

No. of Terminals: 8

Having 8 terminals enables connection to multiple components and ensures proper functionality of the MOSFET Gate Driver in complex circuits.

Minimum Supply Voltage: 3.5 V

The low minimum supply voltage means this gate driver can operate efficiently even in low voltage conditions, making it reliable in various applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures the gate driver remains stable and reliable even in harsh environmental conditions.

Minimum Operating Temperature: -40 °C

With a wide operating temperature range, this gate driver can function effectively in both extreme cold and hot temperatures.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit connections and ensures a secure and stable interface with other components.

Maximum Seated Height: 1.1 mm

The low seated height allows for a compact design and easy integration into electronic devices with limited space.

Width: 3 mm

The small width of this gate driver makes it suitable for applications where space is a constraint, providing versatility in design options.

Length: 3 mm

The compact length of the gate driver contributes to its overall small form factor, making it ideal for compact electronic devices.

Temperature Grade: AUTOMOTIVE

Being automotive-grade means this gate driver meets the stringent requirements for reliable performance in automotive applications, ensuring durability and safety.

Terminal Form: GULL WING

The gull-wing terminal form offers secure solder connections and improved mechanical strength, enhancing the reliability of the gate driver in various operating conditions.

Nominal Supply Voltage: 12 V

The nominal supply voltage of 12V provides compatibility with standard voltage levels in many electronic systems, simplifying integration and compatibility considerations.

Terminal Pitch: 0.65 mm

The small terminal pitch allows for high-density mounting of the gate driver on a circuit board, enabling compact and space-efficient designs.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

This interface IC type offers flexibility in driving MOSFETs in different configurations, providing versatility and adaptability to various circuit requirements.

Technical Specifications

MOSFET Gate Drivers EMB1412MYX attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

JESD-30 Code:

S-PDSO-G8

Length:

3 mm

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage:

14 V

Minimum Supply Voltage:

3.5 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3 mm

Trade Compliance

EMB1412MYX Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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