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EMB1412MY/NOPB

Texas Instruments

EMB1412MY/NOPB by Texas Instruments

EMB1412MY/NOPB by Texas Instruments is a MOSFET Gate Driver with 8 terminals, operating at -40 to 125 °C. It has a supply voltage range of 3.5V to 14V and offers a turn-on/off time of 0.04 us. Ideal for automotive applications due to its compact size and high-temperature tolerance up to 260C.

Median Price

$3.342

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 5,543 parts In-Stock

1+ parts

$3.854

100+ parts

$3.377

1k+ parts

$1.908

10k+ parts

-

5,543

$3.854

$3.377

$1.908

-

Rochester

USA . 12,588 parts In-Stock

1+ parts

-

100+ parts

$2.750

1k+ parts

$2.460

10k+ parts

$2.310

12,588

-

$2.750

$2.460

$2.310

DigiKey

USA . 12,588 parts In-Stock

1+ parts

-

100+ parts

$3.610

1k+ parts

-

10k+ parts

-

12,588

-

$3.610

-

-

Verical

USA . 7,261 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.075

10k+ parts

$2.888

7,261

-

-

$3.075

$2.888

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,574 parts In-Stock

1+ parts

$2.518

100+ parts

-

1k+ parts

-

10k+ parts

-

4,574

$2.518

-

-

-

Vyrian

USA . 914 parts In-Stock

1+ parts

$2.650

100+ parts

-

1k+ parts

-

10k+ parts

-

914

$2.650

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,893 parts In-Stock

1+ parts

$2.385

100+ parts

-

1k+ parts

-

10k+ parts

-

2,893

$2.385

-

-

-

Microchip USA

USA . 1,537 parts In-Stock

1+ parts

$2.800

100+ parts

$2.780

1k+ parts

$2.770

10k+ parts

$2.760

1,537

$2.800

$2.780

$2.770

$2.760

Parana Technologies

USA . 766 parts In-Stock

1+ parts

$8.993

100+ parts

-

1k+ parts

$9.662

10k+ parts

-

766

$8.993

-

$9.662

-

DigiPath Technology Company

USA . 1,408 parts In-Stock

1+ parts

$9.902

100+ parts

$9.110

1k+ parts

-

10k+ parts

-

1,408

$9.902

$9.110

-

-

ChromeModa Solutions

Germany . 6,494 parts In-Stock

1+ parts

$10.104

100+ parts

$8.285

1k+ parts

-

10k+ parts

-

6,494

$10.104

$8.285

-

-

IDEA Electronic Components Group

UK . 678 parts In-Stock

1+ parts

$10.104

100+ parts

$9.599

1k+ parts

$9.094

10k+ parts

-

678

$10.104

$9.599

$9.094

-

QUARKTWIN TECHNOLOGY LTD

USA . 2,371 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

-

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2,371

-

-

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,000

-

-

-

-

Northwest PG Solutions

USA . 1,478 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,478

-

-

-

-

Native Components

USA . 731 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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731

-

-

-

-

Overview

Discover the cutting-edge EMB1412MY/NOPB MOSFET Gate Drivers by Texas Instruments, designed with top-notch quality and precision. Perfect for a wide range of applications, this innovative product offers unparalleled performance and reliability. With a small outline package and heat sink profile, it provides maximum efficiency while ensuring durability. Ideal for automotive use, this advanced gate driver boasts a fast turn-on/off time, making it a valuable asset for any project. Upgrade your system with the EMB1412MY/NOPB and experience the superior benefits it brings to your applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package lightweight and cost-effective.

Surface Mount: YES

Allows for easy installation and saving of space on the circuit board.

Maximum Supply Voltage: 14 V

Can handle a high supply voltage which makes it suitable for various applications.

Package Shape: SQUARE

Square shape allows for efficient placement on the circuit board.

No. of Terminals: 8

Sufficient number of terminals for connecting to other components.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH

Multiple package styles provide flexibility in design and heat dissipation capabilities.

Minimum Supply Voltage: 3.5 V

Low minimum supply voltage allows for operation in a wide range of voltage levels.

Maximum Operating Temperature: 125 °C

High operating temperature range suitable for automotive and industrial applications.

Minimum Operating Temperature: -40 °C

Can operate in extreme cold temperatures, making it suitable for a variety of environments.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and solderability.

Terminal Position: DUAL

Dual terminal position allows for easier connectivity and integration into the circuit.

Maximum Seated Height: 1.1 mm

Low profile design saves space on the circuit board.

Width: 3 mm

Compact width for easy placement on the circuit board.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for a sufficient amount of time at peak reflow temperature during manufacturing.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering during assembly.

Length: 3 mm

Compact length for efficient circuit board layout.

Temperature Grade: AUTOMOTIVE

Automotive-grade temperature rating ensures reliability in harsh conditions.

Terminal Form: GULL WING

Gull wing terminal form for easy surface mount soldering.

Nominal Supply Voltage: 12 V

Suitable nominal supply voltage for many applications.

Turn-on Time: 0.04 us

Fast turn-on time ensures quick response in switching applications.

Terminal Pitch: 0.65 mm

Close terminal pitch for compact design and easy soldering.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

Versatile interface IC type for driving MOSFETs in various configurations.

Turn-off Time: 0.04 us

Fast turn-off time for efficient switching performance.

Technical Specifications

MOSFET Gate Drivers EMB1412MY/NOPB attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage:

14 V

Minimum Supply Voltage:

3.5 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.04 us

Turn-on Time:

.04 us

Width:

3 mm

Trade Compliance

EMB1412MY/NOPB Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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