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DRA777PSIGACDRQ1

Texas Instruments

DRA777PSIGACDRQ1 by Texas Instruments

DRA777PSIGACDRQ1 by Texas Instruments is a multi-functional peripheral with 32-bit address bus width and 64-bit external data bus width. It operates at a max clock frequency of 38.4 MHz, making it suitable for automotive applications requiring high-speed data processing. With a package style of grid array and low profile, this device is ideal for space-constrained environments in the automotive industry.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,519 parts In-Stock

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4,519

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Vyrian

USA . 3,024 parts In-Stock

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3,024

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Distributors (Availability)

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AZTECH Wire

Italy . 447 parts In-Stock

1+ parts

$15.342

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447

$15.342

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One Stop Electronics

USA . 951 parts In-Stock

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$16.000

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951

$16.000

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Parana Technologies

USA . 1,245 parts In-Stock

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$38.526

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$38.526

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DigiPath Technology Company

USA . 2,156 parts In-Stock

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$42.422

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$39.028

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2,156

$42.422

$39.028

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Corohmni

South Africa . 4,982 parts In-Stock

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$42.481

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4,982

$42.481

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ChromeModa Solutions

Germany . 5,016 parts In-Stock

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$43.288

100+ parts

$35.496

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5,016

$43.288

$35.496

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IDEA Electronic Components Group

UK . 1,922 parts In-Stock

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$43.288

100+ parts

$41.124

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$38.959

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1,922

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$38.959

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Native Components

USA . 129 parts In-Stock

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$132.730

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$127.421

129

$132.730

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$127.421

Northwest PG Solutions

USA . 642 parts In-Stock

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$146.003

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642

$146.003

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Corphita

USA . 3,509 parts In-Stock

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Microchip USA

USA . 1,216 parts In-Stock

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Overview

Experience the power of innovation with the DRA777PSIGACDRQ1 by Texas Instruments, a cutting-edge multi-functional peripheral that exceeds expectations in performance and reliability. Manufactured with precision using high-quality materials, this product is designed to meet the stringent requirements of the automotive industry. From CAN to USB compatibility, this versatile device offers seamless integration into a wide range of applications. Unlock new possibilities and drive efficiency with the unmatched value and benefits that the DRA777PSIGACDRQ1 brings to your projects. Embrace excellence with Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material makes the product lightweight and durable, which is ideal for portable multi-functional peripherals.

Maximum Supply Voltage: 1.2 V

The low maximum supply voltage ensures efficient power usage and helps in reducing energy costs over time.

Screening Level: AEC-Q100

AEC-Q100 screening level ensures high reliability and quality, making the product suitable for automotive applications where reliability is crucial.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows the product to perform reliably even under extreme temperature conditions, making it suitable for a wide range of environments.

RAM Words: 2.5M

With a large RAM capacity of 2.5M words, the product can efficiently handle complex tasks and multi-tasking operations, making it a versatile choice for various computing needs.

Bus Compatibility: CAN; ETHERNET; I2C; SPI; UART; USB

The wide range of bus compatibility options allows the product to easily connect and communicate with a variety of devices and systems, enhancing its versatility and usability.

Technical Specifications

Multi-functional Peripherals DRA777PSIGACDRQ1 attributes and parameters. Explore more Multi-functional Peripherals devices from Texas Instruments

Specs

Address Bus Width:

32

Boundary Scan:

YES

Bus Compatibility:

CAN; ETHERNET; I2C; SPI; UART; USB

Maximum Clock Frequency:

38.4 MHz

External Data Bus Width:

64

JESD-30 Code:

S-PBGA-B784

JESD-609 Code:

e1

Length:

23 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

247

No. of Terminals:

784

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

250

RAM Words:

2.5M

Screening Level:

AEC-Q100

Maximum Seated Height:

1.63 mm

Speed:

1800 rpm

Maximum Supply Voltage:

1.2 V

Minimum Supply Voltage:

1.11 V

Nominal Supply Voltage:

1.15 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

23 mm

Trade Compliance

DRA777PSIGACDRQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

5A992.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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