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DP8421V-33

Texas Instruments

DP8421V-33 by Texas Instruments

DP8421V-33 by Texas Instruments is a memory controller with 20-bit address bus, 33.33 MHz clock frequency, and 5V nominal voltage. It is used in DRAM applications for low power mode operation, featuring CMOS technology and quad terminal position.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,599 parts In-Stock

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Anansix

USA . 2,657 parts In-Stock

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Digiode

USA . 2,251 parts In-Stock

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Bristol Electronics

USA . 40 parts In-Stock

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40

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Microfarads

USA . 11 parts In-Stock

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Q Components

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AZTECH Wire

Italy . 379 parts In-Stock

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$11.184

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Native Components

USA . 885 parts In-Stock

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$11.560

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Northwest PG Solutions

USA . 366 parts In-Stock

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$12.716

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$11.444

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One Stop Electronics

USA . 1,022 parts In-Stock

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Corohmni

South Africa . 2,683 parts In-Stock

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$34.581

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Parana Technologies

USA . 1,075 parts In-Stock

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$47.269

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DigiPath Technology Company

USA . 1,050 parts In-Stock

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$52.049

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$47.885

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ChromeModa Solutions

Germany . 778 parts In-Stock

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IDEA Electronic Components Group

UK . 22 parts In-Stock

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$53.111

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$50.455

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$47.800

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Corphita

USA . 3,396 parts In-Stock

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Supply Digital

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Kepictronics

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Overview

Discover the DP8421V-33 by Texas Instruments, a high-quality memory controller designed to optimize performance and reliability. Manufactured by a trusted industry leader, this versatile chip offers endless possibilities for applications in various industries. With its low power mode and wide operating temperature range, this product provides exceptional value and benefits to customers seeking top-notch memory solutions. Upgrade your systems with the DP8421V-33 and experience unparalleled efficiency and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection to the memory controller, ensuring a longer lifespan.

Surface Mount: YES

Surface mount capability allows for easy installation and space-saving on circuit boards.

Maximum Supply Voltage: 5.5 V

Higher maximum supply voltage provides flexibility and compatibility with various systems.

Address Bus Width: 20

A wider address bus width allows for efficient data transmission and processing.

Package Shape: SQUARE

Square package shape enables compact design and easy integration into electronic devices.

Power Supplies (V): 5

Power supply of 5V is a common standard, ensuring compatibility with many systems and devices.

No. of Terminals: 68

Higher number of terminals allows for increased connectivity and functionality.

Package Style (Meter) CHIP CARRIER

Chip carrier package style offers ease of handling and installation.

Minimum Supply Voltage: 4.5 V

Lower minimum supply voltage helps in energy efficiency and prevents damage from overvoltage.

Maximum Operating Temperature: 70 °C

High maximum operating temperature ensures stability and reliability in various environmental conditions.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature allows for use in a wide range of temperature conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers good solderability and conductivity.

Terminal Position: QUAD

Quad terminal position provides a stable connection and ease of installation.

Maximum Seated Height: 5.08 mm

Low maximum seated height enables compact and slim design for devices.

Width: 24.2316 mm

Optimal width for fitting into circuit boards and electronic devices efficiently.

Maximum Clock Frequency: 33.33 MHz

High maximum clock frequency allows for fast data processing and communication.

Length: 24.2316 mm

Optimal length for fitting into circuit boards and electronic devices efficiently.

Temperature Grade: COMMERCIAL

Commercial grade temperature ensures stable performance in standard operating environments.

Peripheral IC Type: MEMORY CONTROLLER, DRAM

Combination of memory controller and DRAM technology provides efficient memory management and data storage.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity for improved performance.

Terminal Form: J BEND

J bend terminal form provides a secure connection and ease of installation.

Maximum Supply Current: 150 mA

Low maximum supply current helps in energy efficiency and prevents overheating.

Nominal Supply Voltage: 5 V

Standard nominal supply voltage of 5V ensures compatibility with various systems.

Memory Organization: 1M X 1

Memory organization of 1M X 1 allows for efficient data storage and retrieval.

No. of Banks: 4

Multiple banks provide increased memory capacity and faster access to data.

Terminal Pitch: 1.27 mm

Optimal terminal pitch for easy installation and connection on circuit boards.

Low Power Mode: YES

Low power mode option helps in energy efficiency and extends the battery life of devices.

Technical Specifications

Memory Controllers DP8421V-33 attributes and parameters. Explore more Memory Controllers devices from Texas Instruments

Specs

Address Bus Width:

20

Boundary Scan:

NO

Maximum Clock Frequency:

33.33 MHz

External Data Bus Width:

0

JESD-30 Code:

S-PQCC-J68

JESD-609 Code:

e0

Length:

24.2316 mm

Low Power Mode:

YES

Memory Organization:

1M X 1

No. of Banks:

4

No. of Terminals:

68

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC68,1.0SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

Memory Controllers

Maximum Supply Current:

150 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

24.2316 mm

Peripheral IC Type:

Trade Compliance

DP8421V-33 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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