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CD54HCT280F3A

Texas Instruments

CD54HCT280F3A by Texas Instruments

CD54HCT280F3A by Texas Instruments is a 9-bit digital arithmetic circuit with 56ns propagation delay at 5V. It has a max operating temperature of 125°C and is ideal for military-grade applications requiring fast signal processing in harsh environments.

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2

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1k+

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Vyrian

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Andel Nordic

Denmark . 5,379 parts In-Stock

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$4.738

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$4.548

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Native Components

USA . 687 parts In-Stock

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$5.260

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AZTECH Wire

Italy . 777 parts In-Stock

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$7.879

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Corohmni

South Africa . 87 parts In-Stock

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Advanced Electronics

New Zealand . 93 parts In-Stock

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$15.629

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$14.222

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$12.816

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Parana Technologies

USA . 360 parts In-Stock

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$16.387

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DigiPath Technology Company

USA . 1,061 parts In-Stock

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IDEA Electronic Components Group

UK . 521 parts In-Stock

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ChromeModa Solutions

Germany . 117 parts In-Stock

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One Stop Electronics

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QUARKTWIN TECHNOLOGY LTD

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Corphita

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Glotronic Ltd.

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Microchip USA

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Northwest PG Solutions

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Supply Digital

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Overview

Upgrade your digital arithmetic circuits with the CD54HCT280F3A from Texas Instruments, a trusted manufacturer known for quality and reliability. This ceramic, glass-sealed package offers a fast propagation delay of just 56ns, making it ideal for a wide range of applications. With a nominal supply voltage of 5V and 9 bits, this component delivers exceptional performance while ensuring efficient power consumption. Trust Texas Instruments to provide cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

No. of Bits: 9

Having 9 bits allows for more precise digital arithmetic calculations and operations.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures stability and reliable performance.

Power Supplies (V): 5

Consistent power supply at 5V ensures efficient operation of the digital arithmetic circuit.

Package Style (Meter): IN-LINE

The in-line package style makes it easy to integrate this circuit into existing systems.

Propagation Delay (tpd): 68 ns

Low propagation delay of 68 ns ensures fast processing speed for arithmetic operations.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making it a suitable choice for digital arithmetic circuits.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this circuit can withstand harsh environmental conditions.

Technical Specifications

Digital Arithmetic Circuits CD54HCT280F3A attributes and parameters. Explore more Digital Arithmetic Circuits devices from Texas Instruments

Specs

Family:

HCT

JESD-30 Code:

R-GDIP-T14

JESD-609 Code:

e0

Length:

19.56 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

No. of Bits:

9

No. of Functions:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Polarity:

COMPLEMENTARY

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

.08 mA

Propagation Delay At Nominal Supply:

56 ns

Propagation Delay (tpd):

68 ns

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

5.08 mm

Sub-Category:

Arithmetic Circuits

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

CD54HCT280F3A Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-396-1344, 5962013961344

NIIN

013961344

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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