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CD54HC147F3A

Texas Instruments

CD54HC147F3A by Texas Instruments

CD54HC147F3A by Texas Instruments is a 9-bit digital arithmetic circuit with 32ns propagation delay at 4.5V. Ideal for military applications, it operates b/w -55 to 125°C and has a max power supply current of 0.16mA.

Median Price

$9.803

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (In-Stock)

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Freelance Electronics

USA . 21 parts In-Stock

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$7.605

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$7.985

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$7.529

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Bristol Electronics

USA . 10 parts In-Stock

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$12.000

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Vyrian

USA . 4,538 parts In-Stock

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Digiode

USA . 1,343 parts In-Stock

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Elcom Components

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Component Sense

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Electronic Expediters

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Electronics Depot

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Manoshevitz Elec. Sales

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ComSIT Distribution GmbH

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Corel Iberica Componentes, S.L.

Spain . 4 parts In-Stock

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Resion

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Mil-Aero Solutions, Inc.

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Native Components

USA . 826 parts In-Stock

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$11.820

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Northwest PG Solutions

USA . 84 parts In-Stock

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$13.002

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$11.702

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AZTECH Wire

Italy . 199 parts In-Stock

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$15.502

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Parana Technologies

USA . 2,096 parts In-Stock

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DigiPath Technology Company

USA . 1,060 parts In-Stock

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$22.305

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IDEA Electronic Components Group

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$21.622

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$20.484

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$22.760

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ChromeModa Solutions

Germany . 544 parts In-Stock

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$22.760

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$18.663

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One Stop Electronics

USA . 488 parts In-Stock

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$40.000

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Andel Nordic

Denmark . 4,314 parts In-Stock

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$43.420

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$30.396

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Corphita

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Supply Digital

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Microchip USA

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Assy Fe

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Overview

Upgrade your digital arithmetic circuits with the CD54HC147F3A from Texas Instruments. Manufactured with precision and reliability, this high-quality product offers fast propagation delay and low power consumption, making it ideal for a wide range of applications. Whether you're designing a new project or upgrading an existing one, this product delivers exceptional performance and value. Trust Texas Instruments for top-notch quality and innovation in digital arithmetic circuits.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package body material ensures durability and reliability in various operating conditions.

Propagation Delay At Nominal Supply: 32 ns

The low propagation delay at nominal supply helps in achieving faster processing speeds and reduced latency.

No. of Bits: 9

Having 9 bits allows for precise and accurate calculations in digital arithmetic circuits.

Nominal Supply Voltage / Vsup (V): 4.5

The 4.5V nominal supply voltage is within a common range for digital circuits, making it compatible with many systems.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C ensures the product can withstand elevated temperatures without issues.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55°C allows the product to function reliably in cold environments.

Technology: CMOS

The CMOS technology used in the product provides low power consumption and high noise immunity, enhancing overall performance.

Technical Specifications

Digital Arithmetic Circuits CD54HC147F3A attributes and parameters. Explore more Digital Arithmetic Circuits devices from Texas Instruments

Specs

Additional Features:

9 TO 4 LINE PRIORITY ENCODER

Family:

HC/UH

JESD-30 Code:

R-GDIP-T16

JESD-609 Code:

e0

Length:

19.56 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

5.2 Amp

No. of Bits:

9

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Polarity:

TRUE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

.16 mA

Propagation Delay At Nominal Supply:

32 ns

Propagation Delay (tpd):

240 ns

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

5.08 mm

Sub-Category:

Arithmetic Circuits

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

4.5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

CD54HC147F3A Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-240-8267, 5962012408267

NIIN

012408267

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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