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CC1121RHMT

Texas Instruments

CC1121RHMT by Texas Instruments

CC1121RHMT by Texas Instruments is a telecom IC with 32 terminals in a square chip carrier package. It operates at temperatures ranging from -40 to 85°C, with a supply voltage of 3V. Ideal for telecom circuits, it features surface mount capability and a very thin profile for industrial applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,072 parts In-Stock

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Digiode

USA . 944 parts In-Stock

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944

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Parana Technologies

USA . 2,292 parts In-Stock

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$7.545

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-

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$8.056

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2,292

$7.545

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$8.056

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DigiPath Technology Company

USA . 1,979 parts In-Stock

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$8.308

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$7.644

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1,979

$8.308

$7.644

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ChromeModa Solutions

Germany . 2,823 parts In-Stock

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$8.478

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$6.952

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2,823

$8.478

$6.952

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IDEA Electronic Components Group

UK . 261 parts In-Stock

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$8.478

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$8.054

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$7.630

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261

$8.478

$8.054

$7.630

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Native Components

USA . 806 parts In-Stock

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$13.630

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806

$13.630

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Northwest PG Solutions

USA . 1,215 parts In-Stock

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$14.993

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$13.494

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$14.993

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AZTECH Wire

Italy . 239 parts In-Stock

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$18.003

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239

$18.003

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One Stop Electronics

USA . 355 parts In-Stock

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$707.000

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355

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Lixinc

USA . 7,322 parts In-Stock

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Corphita

USA . 4,775 parts In-Stock

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Overview

Unleash the power of seamless connectivity with the CC1121RHMT by Texas Instruments. Crafted with precision and quality, this telecom interface IC offers unparalleled performance in a compact chip carrier package. From industrial applications to telecommunications circuits, this innovative product delivers reliability and efficiency. Experience the benefits of advanced technology and superior design with Texas Instruments, where value meets excellence. Elevate your projects with the CC1121RHMT and unlock endless possibilities in connectivity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight, durable, and resistant to heat, making it ideal for telecommunications devices that may experience varying environmental conditions.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto circuit boards, saving time and cost during manufacturing.

No. of Terminals: 32

Having a higher number of terminals allows for more connectivity options and functionality within the device.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures the device can perform reliably even in demanding conditions without overheating.

Temperature Grade: INDUSTRIAL

Designed for industrial use, this product can withstand harsh environments and extended operating periods, making it a reliable choice for telecommunications applications.

Nominal Supply Voltage: 3 V

Operating at a standard 3V supply voltage, this product is compatible with many existing systems and reduces the need for additional components or power sources.

Moisture Sensitivity Level (MSL): 3

With an MSL of 3, this product is more resistant to moisture and humidity, increasing its reliability and longevity in various operating conditions.

Technical Specifications

Other Function Telecom Interface ICs CC1121RHMT attributes and parameters. Explore more Other Function Telecom Interface ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N32

JESD-609 Code:

e4

Length:

5 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC32,.2SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5 mm

Trade Compliance

CC1121RHMT Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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