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74CB3Q3257DGVRG4

Texas Instruments

74CB3Q3257DGVRG4 by Texas Instruments

The Texas Instruments 74CB3Q3257DGVRG4 is a CMOS multiplexer with 4 functions, operating at a supply voltage of 2.5-3.3V. Featuring a propagation delay of 0.2 ns, it has a temperature range of -40 to 85°C and output characteristics in 3-STATE. This device is ideal for industrial applications requiring high-speed signal switching in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,058 parts In-Stock

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Digiode

USA . 1,333 parts In-Stock

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1,333

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Distributors (Availability)

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Native Components

USA . 744 parts In-Stock

1+ parts

$0.040

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-

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$0.038

744

$0.040

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$0.038

AZTECH Wire

Italy . 750 parts In-Stock

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$9.483

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750

$9.483

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Parana Technologies

USA . 227 parts In-Stock

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$10.248

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$10.784

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227

$10.248

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$10.784

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IDEA Electronic Components Group

UK . 727 parts In-Stock

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$11.515

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$10.939

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$10.364

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727

$11.515

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$10.364

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ChromeModa Solutions

Germany . 152 parts In-Stock

1+ parts

$11.515

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$9.442

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152

$11.515

$9.442

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One Stop Electronics

USA . 162 parts In-Stock

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$56.000

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Corphita

USA . 3,365 parts In-Stock

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DigiPath Technology Company

USA . 2,075 parts In-Stock

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$10.382

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Northwest PG Solutions

USA . 927 parts In-Stock

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Overview

Unlock the power of seamless data transfer with the 74CB3Q3257DGVRG4 by Texas Instruments. Crafted with precision by a renowned manufacturer, this multiplexer & demultiplexer offers unparalleled reliability and performance. Perfect for a variety of applications, this versatile component ensures smooth operation and efficient signal routing. Experience the value and benefits of superior quality with Texas Instruments, where innovation meets excellence. Elevate your projects with the 74CB3Q3257DGVRG4 and unleash the full potential of your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, suitable for various applications.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on circuit boards, saving space and simplifying assembly.

No. of Functions: 4

With 4 functions in one device, it provides versatility and efficiency in managing multiple signals or data streams.

Nominal Supply Voltage / Vsup (V): 2.5

Operating at a nominal supply voltage of 2.5V ensures compatibility with standard power sources.

Minimum Supply Voltage (Vsup): 2.3 V

The ability to operate at a minimum supply voltage of 2.3V allows for flexibility in power requirements.

Maximum Supply Voltage (Vsup): 3.6 V

Handling a maximum supply voltage of 3.6V provides a wide operating range for different power scenarios.

Propagation Delay (tpd): 0.2 ns

The low propagation delay of 0.2ns ensures fast and efficient signal processing.

Temperature Grade: INDUSTRIAL

Designed for industrial temperature ranges, making it suitable for harsh environments and extended use.

Technology: CMOS

Utilizing CMOS technology enhances performance, efficiency, and compatibility with various systems.

Output Characteristics: 3-STATE

The 3-state output capability allows for high flexibility in managing output signals and reducing bus contention.

Terminal Finish: NICKEL PALLADIUM GOLD

The use of nickel palladium gold terminal finish ensures reliable connections and long-term durability.

Technical Specifications

Multiplexer & Demultiplexer 74CB3Q3257DGVRG4 attributes and parameters. Explore more Multiplexer & Demultiplexer devices from Texas Instruments

Specs

Family:

CB3Q/3VH/3C/2B

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

4.4 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

1

No. of Outputs:

2

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP16,.25,16

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Propagation Delay (tpd):

.2 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Other Logic ICs

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.6 mm

Trade Compliance

74CB3Q3257DGVRG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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