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74CB3Q3257DBQRG4

Texas Instruments

74CB3Q3257DBQRG4 by Texas Instruments

The Texas Instruments 74CB3Q3257DBQRG4 is a CMOS multiplexer/demultiplexer with 4 functions, operating at a supply voltage of 2.5V to 3.6V. It features a propagation delay of 0.2ns and output characteristics in the form of 3-STATE. This industrial-grade component is ideal for applications requiring high-speed signal switching in compact electronic systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,071 parts In-Stock

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Digiode

USA . 3,404 parts In-Stock

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Euro-Tech

UK . 2,440 parts In-Stock

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One Stop Electronics

USA . 1,569 parts In-Stock

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$6.000

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Parana Technologies

USA . 1,544 parts In-Stock

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$10.963

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$11.427

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ChromeModa Solutions

Germany . 3,500 parts In-Stock

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$12.318

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IDEA Electronic Components Group

UK . 1,371 parts In-Stock

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$12.318

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$11.702

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$11.086

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AZTECH Wire

Italy . 234 parts In-Stock

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$12.875

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Lixinc

USA . 13,741 parts In-Stock

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Corphita

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DigiPath Technology Company

USA . 1,221 parts In-Stock

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Northwest PG Solutions

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Native Components

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Overview

Elevate your electronic projects with the 74CB3Q3257DBQRG4 by Texas Instruments, a versatile multiplexer and demultiplexer designed with precision and quality in mind. With a compact package body and surface mount capabilities, this innovative component offers seamless integration into various applications. Experience the exceptional performance and reliability of Texas Instruments products, as this device provides true value and benefits to customers looking for efficient solutions. Upgrade your designs with the 74CB3Q3257DBQRG4 and unlock a world of possibilities in the realm of electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the multiplexer/demultiplexer.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort during assembly.

No. of Functions: 4

Can handle multiple functions efficiently, making it versatile for various applications.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into circuit designs and layouts.

Nominal Supply Voltage / Vsup (V): 2.5

Operates efficiently at a standard voltage, ensuring compatibility with most systems.

Power Supplies (V): 2.5/3.3

Provides flexibility in power options, accommodating different voltage requirements.

No. of Terminals: 16

Offers ample connections for input and output signals, enhancing connectivity capabilities.

Propagation Delay (tpd): 0.2 ns

Minimal delay in signal transmission ensures fast and efficient performance.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for industrial environments.

Output Characteristics: 3-STATE

Allows for tri-state outputs, providing flexibility in controlling data flow.

Minimum Operating Temperature: -40 °C

Capable of functioning in low-temperature conditions, ensuring reliability in varied environments.

Terminal Finish: NICKEL PALLADIUM GOLD

Provides corrosion resistance and ensures long-term reliability of terminals.

Terminal Position: DUAL

Dual terminal positioning offers stability and secure connections.

Maximum Seated Height: 1.75 mm

Compact size allows for space-saving installation in compact devices or circuits.

Width: 3.9 mm

Slim design facilitates easy integration into circuit layouts with limited space.

Output Polarity: TRUE

Consistent output polarity ensures accuracy and reliability in signal transmission.

Minimum Supply Voltage (Vsup): 2.3 V

Allows for operation at lower voltages, conserving power consumption where required.

Maximum Time At Peak Reflow Temperature (s): 30

Designed to withstand reflow processes, ensuring durability during manufacturing.

Peak Reflow Temperature °C: 260

High reflow temperature tolerance supports robust assembly processes.

Length: 4.9 mm

Compact length enhances flexibility in placement and integration within a circuit.

Temperature Grade: INDUSTRIAL

Suitable for harsh industrial environments, offering reliability under tough conditions.

Technology: CMOS

Utilizes CMOS technology for efficient power consumption and high-speed data processing.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical support and ease of soldering.

Terminal Pitch: 0.635 mm

Precise terminal pitch allows for accurate connections and reliable signal transmission.

Moisture Sensitivity Level (MSL): 2

Moisture-resistant design ensures reliability in damp or humid environments.

Maximum Supply Voltage (Vsup): 3.6 V

Supports higher voltage requirements, providing versatility in power options.

No. of Outputs: 2

Offers multiple output channels for enhanced signal processing and distribution capabilities.

Technical Specifications

Multiplexer & Demultiplexer 74CB3Q3257DBQRG4 attributes and parameters. Explore more Multiplexer & Demultiplexer devices from Texas Instruments

Specs

Family:

CB3Q/3VH/3C/2B

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

4

No. of Inputs:

1

No. of Outputs:

2

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Propagation Delay (tpd):

.2 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Other Logic ICs

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

74CB3Q3257DBQRG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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