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74CB3T3257DGVRE4

Texas Instruments

74CB3T3257DGVRE4 by Texas Instruments

74CB3T3257DGVRE4 by Texas Instruments is a 4-function multiplexer with a supply voltage of 2.5V, operating temperature range of -40 to 85°C, and propagation delay of 0.25ns. Ideal for industrial applications requiring high-speed signal switching in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,366 parts In-Stock

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Digiode

USA . 3,772 parts In-Stock

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AZTECH Wire

Italy . 855 parts In-Stock

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$6.345

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One Stop Electronics

USA . 640 parts In-Stock

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$17.000

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640

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Parana Technologies

USA . 1,505 parts In-Stock

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$30.013

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$65.951

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$30.013

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DigiPath Technology Company

USA . 2,037 parts In-Stock

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$33.048

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$33.048

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ChromeModa Solutions

Germany . 6,032 parts In-Stock

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$33.722

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$27.652

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$33.722

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IDEA Electronic Components Group

UK . 879 parts In-Stock

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$33.722

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$32.036

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$30.350

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879

$33.722

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Corphita

USA . 1,987 parts In-Stock

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Northwest PG Solutions

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Native Components

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Overview

Unlock a world of possibilities with the 74CB3T3257DGVRE4 by Texas Instruments. This high-quality multiplexer & demultiplexer offers unparalleled performance and reliability, thanks to its cutting-edge technology and industrial-grade construction. Whether you're in the automotive, industrial, or consumer electronics industry, this versatile component is sure to streamline your designs and enhance your products. Experience the value and benefits that only Texas Instruments can provide, and take your projects to the next level with the 74CB3T3257DGVRE4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body makes the multiplexer/demultiplexer lightweight and durable, ideal for portable electronic devices.

Surface Mount: YES

The surface mount feature allows for easy and quick installation onto circuit boards, saving time and effort during manufacturing.

No. of Functions: 4

With 4 functions available, this multiplexer/demultiplexer provides versatility in signal routing and processing, making it suitable for complex electronic systems.

Nominal Supply Voltage / Vsup (V): 2.5

The low nominal supply voltage of 2.5V helps in reducing power consumption and heat dissipation, contributing to energy efficiency.

Propagation Delay (tpd): 0.25 ns

The extremely low propagation delay of 0.25 ns ensures fast and efficient signal processing, making this product ideal for high-speed applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C makes this multiplexer/demultiplexer suitable for industrial environments and applications where temperature fluctuations occur.

Technology: CMOS

The CMOS technology used in this product offers low power consumption, high noise immunity, and compatibility with a wide range of digital systems, making it a reliable choice for various applications.

Technical Specifications

Multiplexer & Demultiplexer 74CB3T3257DGVRE4 attributes and parameters. Explore more Multiplexer & Demultiplexer devices from Texas Instruments

Specs

Family:

CB3T/3VT

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

4.4 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

1

No. of Outputs:

2

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP16,.25,16

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Propagation Delay (tpd):

.25 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Other Logic ICs

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.6 mm

Trade Compliance

74CB3T3257DGVRE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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