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2U3837L30QDBVRG4Q1

Texas Instruments

2U3837L30QDBVRG4Q1 by Texas Instruments

2U3837L30QDBVRG4Q1 by Texas Instruments is a Power Management IC with AEC-Q100 screening. It operates at -40 to 125 °C and supports supply voltages from 1.6V to 6V, making it ideal for automotive applications. With a small outline package style and dual terminals, it offers efficient power supply support in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,922 parts In-Stock

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Digiode

USA . 1,831 parts In-Stock

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1,831

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Semicontronic

India . 1,502 parts In-Stock

1+ parts

$1.500

100+ parts

$1.462

1k+ parts

$1.455

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-

1,502

$1.500

$1.462

$1.455

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Ampacity Inc.

Singapore . 866 parts In-Stock

1+ parts

$3.500

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866

$3.500

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One Stop Electronics

USA . 969 parts In-Stock

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$7.500

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969

$7.500

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AZTECH Wire

Italy . 484 parts In-Stock

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$13.815

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484

$13.815

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Parana Technologies

USA . 192 parts In-Stock

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$14.414

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$14.854

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192

$14.414

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$14.854

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DigiPath Technology Company

USA . 767 parts In-Stock

1+ parts

$15.871

100+ parts

$14.601

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767

$15.871

$14.601

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ChromeModa Solutions

Germany . 1,533 parts In-Stock

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$16.195

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$13.280

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$16.195

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IDEA Electronic Components Group

UK . 642 parts In-Stock

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$16.195

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$15.385

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$14.576

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642

$16.195

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$14.576

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Native Components

USA . 682 parts In-Stock

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$16.620

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682

$16.620

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Northwest PG Solutions

USA . 1,795 parts In-Stock

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$18.282

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$16.454

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$18.282

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Microchip USA

USA . 5,946 parts In-Stock

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Metaverse IC Inc.

Canada . 5,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,652 parts In-Stock

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Corphita

USA . 4,327 parts In-Stock

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Corohmni

South Africa . 351 parts In-Stock

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Overview

Elevate your power management solutions with the 2U3837L30QDBVRG4Q1 by Texas Instruments. Crafted with precision and expertise, this Power Management IC offers unparalleled quality and reliability. Ideal for automotive applications, this small outline, low profile package delivers efficient power supply support with a wide operating temperature range. Experience the value of seamless performance and enhanced functionality with Texas Instruments' innovative technology. Upgrade your power management system today with the 2U3837L30QDBVRG4Q1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material offers good durability and reliability for the product.

Surface Mount: YES

Surface mount design allows for easy and efficient installation on circuit boards.

Screening Level: AEC-Q100

AEC-Q100 certification ensures high reliability and quality standards for automotive applications.

Nominal Supply Voltage (Vsup): 1.8 V

Low nominal supply voltage helps in optimizing power consumption in applications.

No. of Terminals: 5

Simplifies the connection process and provides necessary terminals for power management functions.

Maximum Operating Temperature: 125 °C

High maximum operating temperature tolerance makes it suitable for automotive and industrial environments.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for operation in extreme cold conditions as well.

Maximum Seated Height: 1.45 mm

Low seated height helps in efficient PCB design and saves space in compact applications.

Nominal Threshold Voltage (V): +2.64V

Accurate threshold voltage helps in precise power management control.

Temperature Grade: AUTOMOTIVE

Designed to meet automotive industry standards for performance and reliability.

Technical Specifications

Power Management ICs 2U3837L30QDBVRG4Q1 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Additional Features:

RESET THRESHOLD VOLTAGE IS 2.64V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.45 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.025 mA

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

1.6 V

Nominal Supply Voltage (Vsup):

1.8 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+2.64V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.6 mm

Trade Compliance

2U3837L30QDBVRG4Q1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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