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2U3809L30QDBVRG4Q1

Texas Instruments

2U3809L30QDBVRG4Q1 by Texas Instruments

2U3809L30QDBVRG4Q1 by Texas Instruments is a Power Management IC with AEC-Q100 screening. It operates at -40 to 125 °C and supports 3 power supplies at Vsup of 2-6V. With small outline package style, it's ideal for automotive applications requiring low profile components.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,720 parts In-Stock

1+ parts

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8,720

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Digiode

USA . 1,513 parts In-Stock

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1,513

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Distributors (Availability)

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Ampacity Inc.

Singapore . 939 parts In-Stock

1+ parts

$0.500

100+ parts

-

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939

$0.500

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Semicontronic

India . 1,648 parts In-Stock

1+ parts

$1.500

100+ parts

$1.462

1k+ parts

$1.455

10k+ parts

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1,648

$1.500

$1.462

$1.455

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One Stop Electronics

USA . 577 parts In-Stock

1+ parts

$5.500

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-

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577

$5.500

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Native Components

USA . 696 parts In-Stock

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$10.953

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696

$10.953

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Northwest PG Solutions

USA . 1,338 parts In-Stock

1+ parts

$12.049

100+ parts

$10.844

1k+ parts

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1,338

$12.049

$10.844

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AZTECH Wire

Italy . 832 parts In-Stock

1+ parts

$13.453

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832

$13.453

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Parana Technologies

USA . 71 parts In-Stock

1+ parts

$14.972

100+ parts

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$15.397

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71

$14.972

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$15.397

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DigiPath Technology Company

USA . 471 parts In-Stock

1+ parts

$16.486

100+ parts

$15.167

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471

$16.486

$15.167

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ChromeModa Solutions

Germany . 2,262 parts In-Stock

1+ parts

$16.822

100+ parts

$13.794

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2,262

$16.822

$13.794

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IDEA Electronic Components Group

UK . 1,396 parts In-Stock

1+ parts

$16.822

100+ parts

$15.981

1k+ parts

$15.140

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1,396

$16.822

$15.981

$15.140

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Microchip USA

USA . 4,115 parts In-Stock

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4,115

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Corohmni

South Africa . 238 parts In-Stock

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238

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Corphita

USA . 237 parts In-Stock

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237

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Overview

Discover the superior quality and reliability of the 2U3809L30QDBVRG4Q1 by Texas Instruments, a leading manufacturer in the industry. This Power Management IC is perfect for automotive applications with its AEC-Q100 screening level and wide operating temperature range. With a compact design and high performance, this IC offers efficient power supply support without compromising on durability. Trust Texas Instruments to deliver cutting-edge technology that meets your specific needs and exceeds your expectations. Elevate your projects with the unmatched value and benefits of the 2U3809L30QDBVRG4Q1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making the product suitable for various applications.

Surface Mount: YES

Allows for easy and efficient installation on PCBs, saving time and effort during assembly.

Nominal Supply Voltage (Vsup): 3.3 V

Suitable for many electronic devices that operate within this voltage range, providing compatibility with a wide range of systems.

No. of Terminals: 3

Simplifies the connection process and reduces the chances of wiring errors, enhancing the reliability of the product.

Maximum Operating Temperature: 125 °C

Ensures the IC can withstand high temperatures, making it suitable for automotive and industrial applications.

Technical Specifications

Power Management ICs 2U3809L30QDBVRG4Q1 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Additional Features:

RESET THRESHOLD VOLTAGE IS 2.64V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e4

Length:

2.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TO-236

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.45 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.03 mA

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+2.64V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.6 mm

Trade Compliance

2U3809L30QDBVRG4Q1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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