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2U3836H30QDBVRG4Q1

Texas Instruments

2U3836H30QDBVRG4Q1 by Texas Instruments

2U3836H30QDBVRG4Q1 by Texas Instruments is a Power Management IC with 3.3V supply voltage, AEC-Q100 screening level, and -40 to 125 °C operating temperature range. Ideal for automotive applications due to its small size, low profile package style, and nickel palladium gold terminal finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,840 parts In-Stock

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Digiode

USA . 2,476 parts In-Stock

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2,476

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Distributors (Availability)

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One Stop Electronics

USA . 880 parts In-Stock

1+ parts

$4.500

100+ parts

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880

$4.500

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AZTECH Wire

Italy . 311 parts In-Stock

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$6.387

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311

$6.387

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Semicontronic

India . 319 parts In-Stock

1+ parts

$6.500

100+ parts

$6.338

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$6.305

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319

$6.500

$6.338

$6.305

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Parana Technologies

USA . 1,709 parts In-Stock

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$9.901

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$10.470

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1,709

$9.901

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$10.470

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DigiPath Technology Company

USA . 2,034 parts In-Stock

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$10.902

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2,034

$10.902

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IDEA Electronic Components Group

UK . 235 parts In-Stock

1+ parts

$11.125

100+ parts

$10.569

1k+ parts

$10.012

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235

$11.125

$10.569

$10.012

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ChromeModa Solutions

Germany . 124 parts In-Stock

1+ parts

$11.125

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$9.122

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124

$11.125

$9.122

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Native Components

USA . 305 parts In-Stock

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$22.724

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305

$22.724

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Northwest PG Solutions

USA . 980 parts In-Stock

1+ parts

$24.996

100+ parts

$22.497

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980

$24.996

$22.497

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Corphita

USA . 4,965 parts In-Stock

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4,965

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Corohmni

South Africa . 485 parts In-Stock

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485

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Microchip USA

USA . 149 parts In-Stock

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149

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Overview

Enhance the performance of your automotive power management system with the 2U3836H30QDBVRG4Q1 by Texas Instruments. Designed to meet AEC-Q100 standards, this high-quality power management IC offers reliable voltage regulation and power supply support for a wide range of applications. With its compact size, low profile, and dual terminal position, this product is easy to integrate into your design. Trust in Texas Instruments' reputation for excellence in semiconductor manufacturing and experience the benefits of enhanced efficiency and reliability in your automotive projects. Upgrade your power management system today with the 2U3836H30QDBVRG4Q1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide good durability and reliability for long-term use.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto circuit boards.

Nominal Supply Voltage (Vsup): 3.3 V

The nominal supply voltage of 3.3V ensures compatibility with a wide range of electronic devices.

Power Supplies (V): 3

Having multiple power supplies available provides flexibility in powering different components of a device.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows for reliable performance in a variety of environmental conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures the power management IC can function in cold environments.

Maximum Seated Height: 1.45 mm

The low seated height helps reduce the overall size of the device and allows for compact designs.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this power management IC meets the stringent requirements for reliability and durability in vehicles.

Technical Specifications

Power Management ICs 2U3836H30QDBVRG4Q1 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Additional Features:

RESET THRESHOLD VOLTAGE IS 2.79V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.45 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.025 mA

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

1.6 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+2.79V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.6 mm

Trade Compliance

2U3836H30QDBVRG4Q1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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