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TXDV812

STMicroelectronics

TXDV812 by STMicroelectronics

TXDV812 by STMicroelectronics is a single TRIAC designed for AC applications, featuring a max RMS on-state current of 12 A and an off-state voltage of 800 V. It operates b/w -40 °C to 125°C with a gate trigger current of 100 mA. Ideal for controlling power in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Anansix

USA . 1,999 parts In-Stock

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Vyrian

USA . 1,429 parts In-Stock

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Digiode

USA . 1,381 parts In-Stock

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Sternenhof Electronics

Switzerland . 875 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 865 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 357 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 10 parts In-Stock

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LittleDiode

UK . 3 parts In-Stock

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IDEA Electronic Components Group

UK . 787 parts In-Stock

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$4.408

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$3.967

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$4.408

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MKK Technologies

India . 1,883 parts In-Stock

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$8.288

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DigiPath Technology Company

USA . 1,883 parts In-Stock

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$8.288

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Corphita

USA . 651 parts In-Stock

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Parana Technologies

USA . 412 parts In-Stock

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$5.270

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Assy Fe

Spain . 58 parts In-Stock

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Overview

Unlock seamless control and efficiency with the TXDV812 TRIAC from STMicroelectronics, a trusted leader in innovative semiconductor solutions. Designed for high performance in challenging environments, this reliable component excels in applications ranging from motor control to lighting systems. With robust construction and exceptional thermal management, the TXDV812 enhances durability and reduces maintenance costs, delivering exceptional value and peace of mind to every project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material offers excellent insulation properties, making the product reliable and safe for various applications.

Maximum DC Gate Trigger Current: 100 mA

A higher trigger current allows for more robust control and helps ensure the TRIAC operates effectively under varying conditions.

Configuration: SINGLE

The single configuration simplifies usage and integration into circuits, making it a practical choice for designers.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on PCBs, facilitating easier placement in designs.

Terminal Form: THROUGH-HOLE

Through-hole mounting provides strong mechanical support and is ideal for high-power applications with significant thermal stress.

Maximum Leakage Current: 2 mA

Low leakage current enhances energy efficiency and reduces the risk of unintended circuit activation, crucial for sensitive applications.

Maximum Repetitive Peak Off-state Leakage Current: 10 uA

Minimal off-state leakage allows for highly efficient operation in standby mode, making it suitable for power-sensitive devices.

No. of Terminals: 3

The three-terminal design simplifies connections and allows for practical circuit configurations, promoting versatility.

Package Style (Meter): FLANGE MOUNT

Flange mount offers secure attachment options, providing reliable mechanical stability in various applications.

Maximum Operating Temperature: 125 °C

A higher operating temperature limit ensures reliability even in challenging thermal environments, expanding application potential.

Trigger Device Type: ALTERNISTOR TRIAC

The alternistor type provides efficient triggering and operation in AC load control, enhancing performance in power applications.

Minimum Operating Temperature: -40 °C

A wide temperature range makes this TRIAC suitable for a diverse range of environments and conditions.

Terminal Finish: MATTE TIN

The matte tin finish enhances solderability and corrosion resistance, contributing to long-term reliability of connections.

Terminal Position: SINGLE

A single terminal position enables straightforward layout and reduces design complexity in circuit integration.

Maximum RMS On-state Current: 12 A

High RMS current handling capability allows the TRIAC to manage substantial loads, ideal for power control applications.

Maximum DC Gate Trigger Voltage: 1.5 V

Low trigger voltage ensures compatibility with low-voltage control systems, making it more versatile in design applications.

Case Connection: ISOLATED

Isolated case connection enhances safety by minimizing the risk of electrical shorts, ensuring system reliability.

Repetitive Peak Off-state Voltage: 800 V

High off-state voltage rating allows the TRIAC to handle significant electrical stress, making it suitable for heavy-duty applications.

Minimum Critical Rate of Rise of Commutation Voltage: 10 V/us

This capability supports fast switching applications, improving the overall responsiveness of power control circuits.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

A high critical rate of rise facilitates improved performance in dynamic applications, helping to minimize electromagnetic interference.

Maximum Holding Current: 100 mA

The holding current specification ensures stable operation and minimizes false triggering in sensitive applications.

Reference Standard: UL RECOGNIZED

UL recognition signifies compliance with stringent safety standards, giving users confidence in the reliability and safety of the product.

Technical Specifications

Triode For Alternating Current (TRIAC) TXDV812 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Commutation Voltage:

10 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

100 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

100 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

TXDV812 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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