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TXDV412

STMicroelectronics

TXDV412 by STMicroelectronics

TXDV412 by STMicroelectronics is a TRIAC designed for AC applications, featuring a max RMS on-state current of 12 A and a repetitive peak off-state voltage of 400 V. It operates b/w -40 °C to 125°C with a gate trigger current of 100 mA. Ideal for controlling power in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,898 parts In-Stock

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1,898

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Vyrian

USA . 1,865 parts In-Stock

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1,865

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Digiode

USA . 669 parts In-Stock

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669

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Huijzer Components

Netherlands . 249 parts In-Stock

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249

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ECAB

Sweden . 64 parts In-Stock

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64

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 189 parts In-Stock

1+ parts

$2.531

100+ parts

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$2.278

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189

$2.531

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$2.278

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MKK Technologies

India . 326 parts In-Stock

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$4.759

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326

$4.759

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DigiPath Technology Company

USA . 326 parts In-Stock

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$4.759

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326

$4.759

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Corphita

USA . 4,323 parts In-Stock

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Parana Technologies

USA . 1,909 parts In-Stock

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$3.026

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$3.026

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Overview

Unlock the power of efficient energy control with the TXDV412 TRIAC from STMicroelectronics. Designed for reliability and performance, this robust component thrives in diverse applications, ensuring optimal functionality even in challenging environments. Benefit from ST's commitment to quality and innovation, enhancing your projects with a device that boasts low leakage currents and exceptional thermal stability. Elevate your designs with the assurance of excellence that only STMicroelectronics can deliver!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental stress, making the TRIAC reliable in various applications.

Maximum DC Gate Trigger Current: 100 mA

A maximum gate trigger current of 100 mA provides flexibility in triggering the device, suitable for a wide range of circuit designs.

Configuration: SINGLE

The single configuration simplifies circuit design, making it easier to integrate with other components.

Package Shape: RECTANGULAR

The rectangular package shape is space-efficient, allowing for optimal layout in compact electronic designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, ensuring reliability in high-vibration environments.

Maximum Leakage Current: 2 mA

With a maximum leakage current of 2 mA, this TRIAC minimizes energy loss and enhances circuit efficiency.

Maximum Repetitive Peak Off-state Leakage Current: 10 uA

Very low off-state leakage current (10 µA) enhances performance and energy efficiency when the device is not actively switching.

No. of Terminals: 3

The triac design with three terminals allows for versatile connecting and control configurations in the circuit.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides secure and stable installation, ensuring reliable operation in different applications.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature (125 °C) enables use in demanding environments, enhancing its applicability.

Trigger Device Type: ALTERNISTOR TRIAC

As an alternistor TRIAC, it offers excellent switching capabilities and can efficiently control alternating current.

Minimum Operating Temperature: -40 °C

A low minimum operating temperature (-40 °C) ensures functionality in extreme cold conditions, broadening application scope.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance, ensuring reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies layout and reduces complexity in circuit design.

Maximum RMS On-state Current: 12 A

With a maximum RMS on-state current of 12 A, this TRIAC is capable of handling substantial loads, making it suitable for high-power applications.

Maximum DC Gate Trigger Voltage: 1.5 V

A low gate trigger voltage of 1.5 V allows for easier interfacing with control circuits, enhancing compatibility.

Case Connection: ISOLATED

Isolated case connection provides safety and reduces risk of circuit interference, making it a secure choice.

Repetitive Peak Off-state Voltage: 400 V

A high off-state voltage rating (400 V) ensures the TRIAC can handle significant potential without breakdown.

Minimum Critical Rate of Rise of Commutation Voltage: 10 V/µs

This minimum rate of rise in commutation voltage ensures fast switching and responsiveness in dynamic applications.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/µs

A high rate of rise in off-state voltage ensures effective turn-off characteristics, enhancing the device's reliability under various conditions.

Maximum Holding Current: 100 mA

A holding current of 100 mA ensures stability in operation, helping to prevent unwanted triggering during low-current scenarios.

Reference Standard: UL RECOGNIZED

Being UL recognized indicates compliance with safety standards, instilling trust and confidence in product usage.

Technical Specifications

Triode For Alternating Current (TRIAC) TXDV412 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Commutation Voltage:

10 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

100 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

100 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

TXDV412 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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