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TXDV408

STMicroelectronics

TXDV408 by STMicroelectronics

TXDV408 by STMicroelectronics is a single TRIAC designed for AC applications, featuring a max RMS on-state current of 8 A and a repetitive peak off-state voltage of 400 V. It operates b/w -40 °C to 125°C with a gate trigger current of 100 mA. Ideal for controlling power in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,136 parts In-Stock

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3,136

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Vyrian

USA . 1,309 parts In-Stock

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1,309

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Anansix

USA . 1,288 parts In-Stock

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1,288

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ECAB

Sweden . 244 parts In-Stock

1+ parts

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244

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Electronic Expediters

USA . 25 parts In-Stock

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25

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,688 parts In-Stock

1+ parts

$4.406

100+ parts

-

1k+ parts

$3.965

10k+ parts

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1,688

$4.406

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$3.965

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MKK Technologies

India . 33 parts In-Stock

1+ parts

$8.285

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33

$8.285

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DigiPath Technology Company

USA . 33 parts In-Stock

1+ parts

$8.285

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33

$8.285

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Corphita

USA . 2,589 parts In-Stock

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2,589

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Parana Technologies

USA . 524 parts In-Stock

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$5.268

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524

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$5.268

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Overview

Unlock the potential of your projects with the TXDV408 TRIAC from STMicroelectronics, a leader in innovative semiconductor solutions. Designed for reliability and efficiency, this robust device excels in controlling AC applications, offering low leakage current and high performance in demanding environments. With its durable plastic/epoxy packaging, you can trust the TXDV408 to deliver exceptional value and long-lasting performance, making it an ideal choice for industrial, automotive, and consumer electronics applications. Experience the quality and dependability that only STMicroelectronics can provide!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body ensures reliable protection against environmental influences, enhancing the longevity and durability of the TRIAC.

Maximum DC Gate Trigger Current: 100 mA

With a high gate trigger current, this TRIAC allows for effective switching capabilities at lower power thresholds, making it versatile in various applications.

Configuration: SINGLE

A single configuration provides simplicity in design and integration, making it easier to implement in circuit designs.

Package Shape: RECTANGULAR

The rectangular shape aids in efficient mounting and integration within circuit boards, optimizing space usage.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer strong mechanical stability, ensuring secure connections in demanding environments.

Maximum Leakage Current: 2 mA

With minimal leakage current, this TRIAC reduces energy waste and improves overall efficiency in power applications.

Maximum Repetitive Peak Off-state Leakage Current: 10 µA

The low off-state leakage current contributes to less energy loss and better performance in switching applications.

Number of Terminals: 3

Three terminals provide flexibility in design, allowing for various connection configurations to suit different applications.

Package Style (Meter): FLANGE MOUNT

Flange mount design allows for secure attachment to heat sinks or other surfaces, enhancing thermal management in the circuit.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature allows this TRIAC to function effectively in demanding thermal environments, increasing its reliability.

Trigger Device Type: ALTERNISTOR TRIAC

This type of TRIAC allows for effective switching in AC applications, making it suitable for light control, motor control, and heating systems.

Minimum Operating Temperature: -40 °C

A wide operating temperature range ensures that the TRIAC can perform effectively in extreme conditions, making it versatile for various uses.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, enhancing the reliability of the electrical connections.

Terminal Position: SINGLE

A single terminal position simplifies circuit layout and minimizes potential wiring errors in design implementation.

Maximum RMS On-state Current: 8 A

An 8 A rating allows the TRIAC to handle significant loads, making it suitable for a wide range of high-power applications.

Maximum DC Gate Trigger Voltage: 1.5 V

A low gate trigger voltage allows for efficient operation with minimal energy consumption, enhancing overall circuit efficiency.

Case Connection: ISOLATED

Isolation of the case connection improves safety and reliability, making it suitable for sensitive electronic applications.

Repetitive Peak Off-state Voltage: 400 V

A high off-state voltage rating ensures the TRIAC can withstand significant voltage surges, providing robust performance in AC applications.

Minimum Critical Rate of Rise of Commutation Voltage: 50 V/µs

This specification indicates the capability to manage rapid changes in voltage, enhancing performance in fast-switching applications.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/µs

A high rate of rise for off-state voltage helps to prevent unwanted triggering, ensuring reliable operation in variable conditions.

Maximum Holding Current: 100 mA

With a lower holding current, the TRIAC minimizes energy consumption while maintaining stable operation within circuits.

Technical Specifications

Triode For Alternating Current (TRIAC) TXDV408 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Commutation Voltage:

50 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

100 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

100 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

TXDV408 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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