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TS1220-800B

STMicroelectronics

TS1220-800B by STMicroelectronics

The STMicroelectronics TS1220-800B is a Silicon Controlled Rectifier with 15mA DC Gate Trigger Current, 115A Non Repetitive Peak On-state Current, and 8A Max On-state Current. It operates b/w -40 to 125 °C and has a Repetitive Peak Off-state Voltage of 800V. Ideal for applications requiring precise current control in high-power circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,311 parts In-Stock

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Anansix

USA . 1,341 parts In-Stock

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1,341

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Vyrian

USA . 242 parts In-Stock

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242

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 10 parts In-Stock

1+ parts

$2.492

100+ parts

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$2.243

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10

$2.492

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$2.243

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MKK Technologies

India . 2,041 parts In-Stock

1+ parts

$4.687

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2,041

$4.687

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DigiPath Technology Company

USA . 2,041 parts In-Stock

1+ parts

$4.687

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2,041

$4.687

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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Corphita

USA . 1,607 parts In-Stock

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1,607

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Parana Technologies

USA . 1,333 parts In-Stock

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$2.980

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1,333

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$2.980

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Overview

Looking to enhance your electronic devices with top-notch components? Look no further than the TS1220-800B by STMicroelectronics. With a reputation for high-quality manufacturing, this Silicon Controlled Rectifier (SCR) offers reliable performance across a range of applications. Say goodbye to worries about overheating or inefficiency, as this product boasts a maximum on-state current of 8A and a non-repetitive peak on-state current of 115A. Trust in STMicroelectronics to deliver the value and benefits you need for your projects.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 15 mA

Low trigger current requirement allows for efficient triggering of the SCR, making it reliable and energy efficient.

Non Repetitive Peak On-state Current: 115 A

High on-state current handling capability ensures that the SCR can handle surge currents effectively without damage.

Surface Mount: YES

Surface mount capability enables easy and convenient installation on circuit boards, saving space and simplifying manufacturing processes.

Maximum On-state Current: 8 A

The high maximum on-state current rating allows the SCR to handle moderate to high current loads with ease.

Maximum Leakage Current: 2 mA

Low leakage current ensures minimal power loss and improves overall efficiency of the SCR.

Maximum Operating Temperature: 125 °C

Wide operating temperature range makes the SCR suitable for various environmental conditions and ensures stable performance.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this device offers precise control over the switching of current in a circuit, making it versatile and reliable.

Minimum Operating Temperature: -40 °C

Ability to operate at low temperatures makes this SCR ideal for applications in cold environments or industrial settings.

Maximum DC Gate Trigger Voltage: 1.3 V

Low gate trigger voltage requirement simplifies the control circuit design and enhances the efficiency of the overall system.

Repetitive Peak Off-state Voltage: 800 V

High peak off-state voltage rating ensures that the SCR can handle high voltage spikes or surges without breakdown, ensuring reliability in the circuit.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/us

The ability to withstand high rates of voltage rise enhances the robustness of the SCR and protects it from voltage transients.

Maximum Holding Current: 40 mA

The holding current rating ensures that the SCR remains in the on-state even after the gate signal is removed, providing stability to the circuit operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TS1220-800B attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

40 mA

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

115 A

Maximum On-state Current:

8 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Trigger Device Type:

SCR

Trade Compliance

TS1220-800B Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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