Loading...

TS1235

STMicroelectronics

TS1235 by STMicroelectronics

STMicroelectronics' TS1235 is a Silicon Controlled Rectifier with 80mA DC Gate Trigger Current, 250A Non Repetitive Peak On-state Current, and 35A Max On-state Current. It operates b/w -55 to 125 °C and has a Repetitive Peak Off-state Voltage of 1200V. Ideal for power control applications requiring high current handling capabilities.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,356 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,356

-

-

-

-

Anansix

USA . 1,754 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,754

-

-

-

-

Vyrian

USA . 137 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

137

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,982 parts In-Stock

1+ parts

$3.234

100+ parts

-

1k+ parts

$2.910

10k+ parts

-

1,982

$3.234

-

$2.910

-

MKK Technologies

India . 626 parts In-Stock

1+ parts

$6.081

100+ parts

-

1k+ parts

-

10k+ parts

-

626

$6.081

-

-

-

DigiPath Technology Company

USA . 626 parts In-Stock

1+ parts

$6.081

100+ parts

-

1k+ parts

-

10k+ parts

-

626

$6.081

-

-

-

Corphita

USA . 1,470 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,470

-

-

-

-

Parana Technologies

USA . 1,450 parts In-Stock

1+ parts

-

100+ parts

$3.866

1k+ parts

-

10k+ parts

-

1,450

-

$3.866

-

-

Overview

Upgrade your power control systems with the TS1235 from STMicroelectronics. Designed with precision and reliability in mind, this Silicon Controlled Rectifier offers a maximum On-state Current of 35 A, ensuring seamless performance in a variety of applications. From industrial machinery to energy management systems, the TS1235 delivers unparalleled quality and efficiency. Trust in STMicroelectronics for cutting-edge technology that exceeds expectations. Experience the value and benefits of the TS1235 today!

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 80 mA

Higher gate trigger current allows for efficient and reliable control of the SCR, enhancing its performance.

Non Repetitive Peak On-state Current: 250 A

Ability to handle high peak on-state current without damage makes this SCR suitable for demanding applications.

Maximum On-state Current: 35 A

Can handle moderate continuous on-state current, making it versatile for various electronic circuits.

Maximum Leakage Current: 6 mA

Low leakage current ensures minimal power loss and helps in maintaining efficiency of the SCR.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows the SCR to function reliably in different environmental conditions.

Trigger Device Type: SCR

Being an SCR, it offers high reliability and robust performance in controlling power circuits.

Maximum DC Gate Trigger Voltage: 3 V

Low gate trigger voltage requirement ensures easier triggering of the SCR, simplifying circuit design.

Repetitive Peak Off-state Voltage: 1200 V

Ability to withstand high off-state voltage makes this SCR suitable for high voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 50 V/us

Fast rate of rise of off-state voltage allows quick response of the SCR during switching, improving overall performance.

Nominal Circuit Commutated Turn-off Time: 100 us

Short turn-off time helps in fast switching operation of the SCR, enabling efficient control of power circuits.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TS1235 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Nominal Circuit Commutated Turn-off Time:

100 us

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

80 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Leakage Current:

6 mA

Non Repetitive Peak On-state Current:

250 A

Maximum On-state Current:

35 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Repetitive Peak Off-state Voltage:

1200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

TS1235 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

4320-99-811-8412, 4320998118412, 5360-99-577-3277, 5360995773277, 5905-00-683-4995, 5905006834995

NIIN

998118412, 995773277, 006834995

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 17