Loading...

TS1220-800H-TR

STMicroelectronics

TS1220-800H-TR by STMicroelectronics

TS1220-800H-TR by STMicroelectronics is a Silicon Controlled Rectifier with 15mA DC Gate Trigger Current, 115A Non Repetitive Peak On-state Current, and 8A Max On-state Current. It operates b/w -40 to 125 °C and has a Repetitive Peak Off-state Voltage of 800V. Ideal for power control applications requiring high current handling capabilities.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,796 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,796

-

-

-

-

Vyrian

USA . 1,831 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,831

-

-

-

-

Digiode

USA . 213 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

213

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 985 parts In-Stock

1+ parts

$3.685

100+ parts

-

1k+ parts

$3.316

10k+ parts

-

985

$3.685

-

$3.316

-

MKK Technologies

India . 468 parts In-Stock

1+ parts

$6.929

100+ parts

-

1k+ parts

-

10k+ parts

-

468

$6.929

-

-

-

DigiPath Technology Company

USA . 468 parts In-Stock

1+ parts

$6.929

100+ parts

-

1k+ parts

-

10k+ parts

-

468

$6.929

-

-

-

Parana Technologies

USA . 2,342 parts In-Stock

1+ parts

-

100+ parts

$4.406

1k+ parts

-

10k+ parts

-

2,342

-

$4.406

-

-

Corphita

USA . 93 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

93

-

-

-

-

Overview

Unleash the power of efficiency and reliability with the STMicroelectronics TS1220-800H-TR Silicon Controlled Rectifier. Crafted by a trusted manufacturer known for cutting-edge technology, this SCR offers unparalleled performance in a variety of applications. From industrial machinery to consumer electronics, this high-quality component ensures smooth operation and maximum durability. Say goodbye to downtime and hello to seamless functionality with the TS1220-800H-TR - your gateway to enhanced productivity and peace of mind.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 15 mA

The low gate trigger current ensures efficient and accurate triggering of the SCR, making it a reliable choice for various applications.

Non Repetitive Peak On-state Current: 115 A

With a high non-repetitive peak on-state current, this SCR can handle sudden surges of current without damage, making it suitable for high-power applications.

Maximum On-state Current: 8 A

The maximum on-state current of 8 A allows the SCR to carry a substantial amount of current continuously, making it suitable for medium to high-power applications.

Maximum Leakage Current: 2 mA

The low leakage current of 2 mA ensures minimal power loss when the SCR is in the off state, making it energy efficient.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this SCR can withstand high temperatures, making it suitable for industrial applications where heat dissipation is crucial.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this device offers precise control over the conduction of current, making it a preferred choice for applications requiring high reliability and accuracy.

Minimum Operating Temperature: -40 °C

The wide operating temperature range from -40 to 125 °C makes this SCR suitable for use in a variety of environments, including extreme cold conditions.

Maximum DC Gate Trigger Voltage: 1.3 V

The low gate trigger voltage of 1.3 V ensures efficient and reliable triggering of the SCR, making it suitable for applications where precise control of the current flow is required.

Repetitive Peak Off-state Voltage: 800 V

With a high repetitive peak off-state voltage rating of 800 V, this SCR can isolate the circuit effectively and protect sensitive components from voltage spikes.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/us

The minimum critical rate of rise of off-state voltage of 200 V/us ensures that the SCR can quickly react to changes in voltage levels, making it ideal for applications requiring fast response times.

Maximum Holding Current: 40 mA

The maximum holding current of 40 mA ensures that the SCR remains in the on state once triggered, providing stability and reliability in high-power applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TS1220-800H-TR attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

40 mA

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

115 A

Maximum On-state Current:

8 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

TS1220-800H-TR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 17