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TS1220-800B-TR

STMicroelectronics

TS1220-800B-TR by STMicroelectronics

STMicroelectronics' TS1220-800B-TR is a Silicon Controlled Rectifier with 15mA DC Gate Trigger Current, 115A Non Repetitive Peak On-state Current, and 8A Max On-state Current. Ideal for applications requiring high current switching capabilities in a compact surface-mount package.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,980 parts In-Stock

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4,980

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Vyrian

USA . 2,317 parts In-Stock

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2,317

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Anansix

USA . 487 parts In-Stock

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487

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,048 parts In-Stock

1+ parts

$4.103

100+ parts

-

1k+ parts

$3.693

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2,048

$4.103

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$3.693

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MKK Technologies

India . 941 parts In-Stock

1+ parts

$7.716

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941

$7.716

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DigiPath Technology Company

USA . 941 parts In-Stock

1+ parts

$7.716

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941

$7.716

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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Corphita

USA . 581 parts In-Stock

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581

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Parana Technologies

USA . 73 parts In-Stock

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$4.906

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73

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$4.906

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Overview

Unlock the power of reliable and efficient electrical control with the TS1220-800B-TR from STMicroelectronics. As a leader in semiconductor technology, STMicroelectronics brings you top-of-the-line Silicon Controlled Rectifiers designed for superior performance and durability. Whether you're looking to optimize power management in industrial machinery, motor control systems, or lighting applications, this SCR offers maximum on-state current of 8A, non-repetitive peak on-state current of 115A, and a wide operating temperature range. Trust STMicroelectronics to deliver quality products that provide unmatched value and benefits to meet all your needs.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 15 mA

Low gate trigger current helps in efficient operation and control of the SCR, making it a reliable choice for various applications.

Non Repetitive Peak On-state Current: 115 A

High peak on-state current handling capability allows the SCR to switch high loads, making it suitable for demanding industrial applications.

Surface Mount: YES

Surface mount capability makes the SCR easy to install on PCBs, saving space and simplifying the overall design of electronic circuits.

Maximum On-state Current: 8 A

With a high maximum on-state current rating, this SCR can handle moderate to high power loads effectively, expanding its range of applications.

Maximum Leakage Current: 2 mA

Low leakage current ensures minimal power loss when the SCR is in the off-state, enhancing the overall efficiency of the system.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows the SCR to be used in harsh environments without the risk of overheating or performance degradation.

Trigger Device Type: SCR

Being an SCR (Silicon Controlled Rectifier), this device offers precise control over the switching of AC power, making it ideal for a wide range of applications including motor control and power regulation.

Minimum Operating Temperature: -40 °C

Wide operating temperature range enables the SCR to function reliably in extreme cold conditions, increasing its versatility and usability in various environments.

Maximum DC Gate Trigger Voltage: 1.3 V

Low gate trigger voltage ensures efficient triggering of the device, leading to lower power consumption and improved overall performance.

Repetitive Peak Off-state Voltage: 800 V

High repetitive off-state voltage handling capability makes the SCR suitable for applications where high voltage levels need to be controlled effectively and safely.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/us

Fast critical rate of rise of off-state voltage ensures quick response of the SCR to voltage spikes, offering protection against overvoltage conditions and enhancing system reliability.

Maximum Holding Current: 40 mA

High holding current capability allows the SCR to remain in the on-state even after the gate signal is removed, providing stability and reliability in applications requiring continuous conduction.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TS1220-800B-TR attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

40 mA

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

115 A

Maximum On-state Current:

8 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Trigger Device Type:

SCR

Trade Compliance

TS1220-800B-TR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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