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TS1220-800H

STMicroelectronics

TS1220-800H by STMicroelectronics

STMicroelectronics' TS1220-800H SCR has a max DC gate trigger current of 15mA, non-repetitive peak on-state current of 115A, and max on-state current of 8A. Ideal for applications requiring high voltage switching such as power supplies and motor control systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,313 parts In-Stock

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2,313

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Anansix

USA . 2,177 parts In-Stock

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Digiode

USA . 760 parts In-Stock

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760

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 489 parts In-Stock

1+ parts

$3.713

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$3.342

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489

$3.713

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$3.342

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MKK Technologies

India . 1,706 parts In-Stock

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$6.982

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$6.982

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DigiPath Technology Company

USA . 1,706 parts In-Stock

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$6.982

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1,706

$6.982

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Parana Technologies

USA . 1,071 parts In-Stock

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$4.440

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1,071

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$4.440

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Corphita

USA . 927 parts In-Stock

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927

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Overview

Looking for a reliable Silicon Controlled Rectifier (SCR) for your next project? Look no further than the TS1220-800H by STMicroelectronics. With a maximum DC gate trigger current of 15 mA and non repetitive peak on-state current of 115 A, this SCR offers superior quality and performance. Whether you're designing power supplies, motor control circuits, or lighting systems, this product provides the efficiency and reliability you need. Trust in STMicroelectronics to deliver cutting-edge technology that meets your needs. Elevate your projects with the TS1220-800H and experience the benefits it brings to your applications.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 15 mA

Low trigger current ensures efficient and reliable operation of the SCR, reducing the risk of false triggering.

Non Repetitive Peak On-state Current: 115 A

High peak current handling capability allows the SCR to handle surges in current without damage, making it suitable for high-power applications.

Maximum On-state Current: 8 A

The SCR can handle continuous currents up to 8A, making it suitable for a wide range of medium to high-power applications.

Maximum Leakage Current: 2 mA

Low leakage current ensures that the SCR does not conduct when it should be off, improving efficiency and reducing power losses.

Maximum Operating Temperature: 125 °C

The SCR can operate at high temperatures without performance degradation, suitable for applications where temperature may vary.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this product allows for precise control of current flow, making it ideal for applications requiring controlled switching.

Repetitive Peak Off-state Voltage: 800 V

High off-state voltage rating allows the SCR to be used in applications with high voltage requirements, ensuring reliable operation.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/us

The SCR can respond quickly to changes in voltage, making it suitable for applications where fast switching is required.

Maximum Holding Current: 40 mA

High holding current ensures the SCR remains in the on-state even when the gate signal is removed, providing stability in applications with varying input signals.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TS1220-800H attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

40 mA

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

115 A

Maximum On-state Current:

8 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

TS1220-800H Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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