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TS1220-700H

STMicroelectronics

TS1220-700H by STMicroelectronics

TS1220-700H by STMicroelectronics is a single SCR with a max repetitive peak reverse voltage of 700 V and non-repetitive peak on-state current of 115 A. It operates efficiently in temperatures from -40 °C to 125°C, making it ideal for power control applications. Its compact through-hole design ensures easy integration into various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,296 parts In-Stock

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Anansix

USA . 1,274 parts In-Stock

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1,274

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Vyrian

USA . 141 parts In-Stock

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141

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 568 parts In-Stock

1+ parts

$3.998

100+ parts

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$3.598

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568

$3.998

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$3.598

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MKK Technologies

India . 2,364 parts In-Stock

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$7.519

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2,364

$7.519

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DigiPath Technology Company

USA . 2,364 parts In-Stock

1+ parts

$7.519

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2,364

$7.519

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Corphita

USA . 2,216 parts In-Stock

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2,216

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Parana Technologies

USA . 276 parts In-Stock

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$4.781

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276

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$4.781

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Overview

Unlock the potential of your designs with the TS1220-700H from STMicroelectronics, a leader in high-quality semiconductor solutions. This robust Silicon Controlled Rectifier (SCR) is engineered for reliability and efficiency, making it ideal for applications like motor control and power management. With its superior performance, compact design, and proven durability, the TS1220-700H empowers engineers to create innovative solutions while ensuring safety and longevity in demanding environments. Experience excellence with STMicroelectronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and resistance to environmental factors, making it suitable for a wide range of applications.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current makes this SCR energy-efficient and easier to drive, reducing overall power consumption in circuits.

Configuration: SINGLE

Single configuration simplifies design and integration into existing systems, making it user-friendly for various applications.

Non Repetitive Peak On-state Current: 115 A

High peak on-state current capability ensures the SCR can handle large current surges, making it ideal for applications requiring high performance.

Package Shape: RECTANGULAR

The rectangular package shape aids in efficient space utilization on PCBs, making it suitable for compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and stable connections, enhancing reliability in demanding environments.

Maximum On-state Current: 8 A

Capable of handling up to 8 A on-state current, ensures it meets a variety of power needs in consumer and industrial applications.

Maximum Leakage Current: 2 mA

Low leakage current helps prevent energy loss when the device is off, improving overall circuit efficiency and reliability.

Repetitive Peak Reverse Voltage: 700 V

High reverse voltage rating makes it suitable for applications in high-voltage environments, enhancing its versatility.

No. of Terminals: 3

Three-terminal design allows for easy implementation and integration into existing circuits, simplifying the engineering process.

Package Style (Meter): IN-LINE

In-line package style makes it easy to mount and solder onto printed circuit boards, facilitating manufacturing processes.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature allows for use in harsh environments, broadening the potential application areas.

Trigger Device Type: SCR

As a silicon controlled rectifier, it provides reliable switching capabilities, making it ideal for both AC and DC applications.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures performance in extreme cold environments, enhancing reliability across diverse climates.

Terminal Position: SINGLE

Single terminal position simplifies design in various configurations, making it versatile for many applications.

Maximum RMS On-state Current: 12 A

Ability to handle 12 A RMS on-state current provides confidence in its capability to support demanding load requirements.

Maximum DC Gate Trigger Voltage: 0.8 V

Low gate trigger voltage allows for compatible interfacing with low-voltage circuits, simplifying circuit design.

Case Connection: ANODE

Anode case connection is standard for SCRs, ensuring compatibility with existing circuit designs and enhancing ease of installation.

Repetitive Peak Off-state Voltage: 700 V

High off-state voltage rating allows for use in high-voltage applications, providing safety and reliability.

Minimum Critical Rate of Rise of Off-state Voltage: 5 V/us

A minimum rate of rise ensures stable operation under surge conditions, protecting circuits from damage.

Maximum Holding Current: 5 mA

Low holding current contributes to energy efficiency and allows easy turn-off, enhancing the operational flexibility of the device.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TS1220-700H attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

5 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JESD-30 Code:

R-PSIP-T3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

115 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

8 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

700 V

Repetitive Peak Reverse Voltage:

700 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TS1220-700H Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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