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TS120-800F

STMicroelectronics

TS120-800F by STMicroelectronics

STMicroelectronics' TS120-800F is a SCR with 800V repetitive peak reverse voltage, 7.5A non-repetitive peak on-state current, and 0.2mA max DC gate trigger current. It is used in applications requiring high power control such as industrial automation and motor drives due to its small outline package style and surface mount capability.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,654 parts In-Stock

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Digiode

USA . 2,407 parts In-Stock

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2,407

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Anansix

USA . 1,067 parts In-Stock

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1,067

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 966 parts In-Stock

1+ parts

$2.734

100+ parts

-

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$2.461

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966

$2.734

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$2.461

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MKK Technologies

India . 1,707 parts In-Stock

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$5.142

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$5.142

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DigiPath Technology Company

USA . 1,707 parts In-Stock

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$5.142

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1,707

$5.142

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Corphita

USA . 1,834 parts In-Stock

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1,834

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Parana Technologies

USA . 1,736 parts In-Stock

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$3.269

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$3.269

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Overview

Enhance your electronic designs with the TS120-800F Silicon Controlled Rectifier by STMicroelectronics. Crafted with precision and quality, this SCR offers unparalleled performance in a compact rectangular package, making it ideal for a wide range of applications. From consumer electronics to industrial automation, this versatile component ensures reliability and efficiency. Trust in STMicroelectronics for cutting-edge technology that delivers value and innovation to meet your design needs. Experience the difference with the TS120-800F and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and protection for the internal components of the SCR, making it suitable for various industrial applications.

Maximum DC Gate Trigger Current: 0.2 mA

The low DC gate trigger current ensures efficient and controlled triggering of the SCR, leading to reliable performance in different operating conditions.

Configuration: SINGLE

The single configuration simplifies the installation and operation of the SCR, making it user-friendly and suitable for individual applications.

Non Repetitive Peak On-state Current: 7.5 A

The high non-repetitive peak on-state current allows the SCR to handle sudden surges in current, ensuring stable and continuous operation without the risk of damage.

Surface Mount: YES

Being surface mountable makes the SCR easy to mount on circuit boards, saving space and facilitating mass production of electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape offers a compact design for the SCR, making it suitable for applications where space is limited.

Terminal Form: GULL WING

The gull wing terminal form provides a secure and stable connection for the SCR, ensuring proper functionality and ease of installation.

Maximum On-state Current: 0.65 A

The maximum on-state current rating indicates the capability of the SCR to handle continuous current flow without overheating or malfunctioning.

Maximum Leakage Current: 500 mA

The low maximum leakage current ensures minimal power loss and high efficiency in the operation of the SCR, reducing energy consumption.

Repetitive Peak Reverse Voltage: 800 V

The high repetitive peak reverse voltage rating allows the SCR to withstand reverse voltage spikes, ensuring robust performance in various power supply applications.

Maximum Repetitive Peak Off-state Leakage Current: 500 uA

The low off-state leakage current ensures minimal power loss and high reliability when the SCR is in the off state, contributing to energy efficiency.

No. of Terminals: 4

Having 4 terminals provides multiple connection points for the SCR, facilitating integration into different circuit configurations for versatile application usage.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers a compact form factor for the SCR, making it suitable for space-constrained applications and enhancing overall device aesthetics.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures the SCR can function reliably in elevated temperature environments without the risk of overheating or performance degradation.

Trigger Device Type: SCR

Being an SCR trigger device indicates the efficient and reliable switching capabilities of the component, making it ideal for various power control applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers good conductivity and corrosion resistance, ensuring reliable electrical connections for the SCR over an extended service life.

Terminal Position: DUAL

Having dual terminal positions provides flexibility in the installation and connection of the SCR, catering to different circuit layouts and requirements.

Maximum RMS On-state Current: 1 A

The maximum RMS on-state current rating indicates the SCR's capability to handle continuous current flow efficiently without exceeding permissible operating limits.

Maximum DC Gate Trigger Voltage: 0.8 V

The low DC gate trigger voltage ensures efficient and reliable triggering of the SCR, minimizing power losses and enhancing overall performance.

Case Connection: ANODE

The anode case connection allows for easy and secure integration of the SCR into systems where the anode connection is required for proper operation.

Repetitive Peak Off-state Voltage: 800 V

The repetitive peak off-state voltage rating indicates the SCR's ability to withstand voltage spikes when in the off state, ensuring robust performance in various applications.

Minimum Critical Rate of Rise of Off-state Voltage: 50 V/us

The high critical rate of rise of off-state voltage indicates the SCR's fast response to changing voltage conditions, making it suitable for applications where quick switching is required.

Maximum Holding Current: 6 mA

The maximum holding current rating indicates the minimum current required to keep the SCR in the on state, ensuring stable operation and reliable performance under varying load conditions.

Nominal Circuit Commutated Turn-off Time: 200 us

The nominal circuit commutated turn-off time provides an indication of the SCR's ability to turn off quickly and efficiently, allowing for precise control and operation in dynamic systems.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TS120-800F attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Case Connection:

Nominal Circuit Commutated Turn-off Time:

200 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

6 mA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Maximum Leakage Current:

500 mA

Non Repetitive Peak On-state Current:

7.5 A

No. of Elements:

1

No. of Terminals:

4

Maximum On-state Current:

.65 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

1 A

Maximum Repetitive Peak Off-state Leakage Current:

500 uA

Repetitive Peak Off-state Voltage:

800 V

Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TS120-800F Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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