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TN1215-800H

STMicroelectronics

TN1215-800H by STMicroelectronics

TN1215-800H by STMicroelectronics is a single SCR in a rectangular plastic package, ideal for high-voltage applications. It supports a max repetitive peak reverse voltage of 800 V and non-repetitive peak on-state current of 115 A. Operating b/w -40 °C to 125°C, it’s perfect for robust power control solutions.

Median Price

$0.692

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 270,000 parts In-Stock

1+ parts

-

100+ parts

$0.679

1k+ parts

$0.563

10k+ parts

$0.502

270,000

-

$0.679

$0.563

$0.502

Verical

USA . 180,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.704

10k+ parts

$0.628

180,000

-

-

$0.704

$0.628

Avnet

USA . 5,625 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,625

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,995 parts In-Stock

1+ parts

$0.570

100+ parts

-

1k+ parts

-

10k+ parts

-

3,995

$0.570

-

-

-

TME

Poland . 225 parts In-Stock

1+ parts

$1.850

100+ parts

$0.969

1k+ parts

$0.631

10k+ parts

-

225

$1.850

$0.969

$0.631

-

Vyrian

USA . 12,275 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,275

-

-

-

-

Anansix

USA . 525 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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525

-

-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 915 parts In-Stock

1+ parts

$0.540

100+ parts

-

1k+ parts

-

10k+ parts

-

915

$0.540

-

-

-

IDEA Electronic Components Group

UK . 233 parts In-Stock

1+ parts

$4.320

100+ parts

-

1k+ parts

$3.888

10k+ parts

-

233

$4.320

-

$3.888

-

MKK Technologies

India . 977 parts In-Stock

1+ parts

$8.124

100+ parts

-

1k+ parts

-

10k+ parts

-

977

$8.124

-

-

-

DigiPath Technology Company

USA . 977 parts In-Stock

1+ parts

$8.124

100+ parts

-

1k+ parts

-

10k+ parts

-

977

$8.124

-

-

-

Microchip USA

USA . 3,440 parts In-Stock

1+ parts

$8.190

100+ parts

-

1k+ parts

-

10k+ parts

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3,440

$8.190

-

-

-

AZTECH Wire

Italy . 1,173 parts In-Stock

1+ parts

$20.870

100+ parts

-

1k+ parts

-

10k+ parts

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1,173

$20.870

-

-

-

Authorized Procurement Solutions

USA . 243,225 parts In-Stock

1+ parts

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100+ parts

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243,225

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Eastek

USA . 42,000 parts In-Stock

1+ parts

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42,000

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GreenTree Electronics

Israel . 42,000 parts In-Stock

1+ parts

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42,000

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A-Z Elektronik GmbH

Germany . 5,306 parts In-Stock

1+ parts

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100+ parts

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5,306

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-

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Kepictronics

USA . 1,200 parts In-Stock

1+ parts

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100+ parts

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1,200

-

-

-

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Parana Technologies

USA . 341 parts In-Stock

1+ parts

-

100+ parts

$5.166

1k+ parts

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10k+ parts

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341

-

$5.166

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iodParts Technologies Inc.

India . 75 parts In-Stock

1+ parts

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100+ parts

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75

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Overview

Unlock unparalleled performance with the TN1215-800H from STMicroelectronics, a leader in innovative power solutions. This Silicon Controlled Rectifier ensures reliable operation in demanding environments, making it ideal for applications ranging from motor control to lighting systems. With its robust design and proven quality, you’ll benefit from enhanced efficiency and longevity, empowering your projects with unmatched reliability and peak performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making this SCR suitable for various applications.

Maximum DC Gate Trigger Current: 0.2 mA

A low gate trigger current allows for efficient operation and reduces power losses, making it ideal for low-power control applications.

Configuration: SINGLE

Single configuration simplifies circuit design and provides reliable performance without the complexities of multiple devices.

Non Repetitive Peak On-state Current: 115 A

High peak on-state current capability ensures that this SCR can handle substantial load conditions, making it suitable for demanding applications.

Package Shape: RECTANGULAR

The rectangular package shape aids in space-efficient PCB designs, allowing for better layout options in compact electronics.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and reliable electrical connections, especially in high-stress environments.

Maximum On-state Current: 8 A

With a maximum on-state current of 8 A, this SCR is capable of handling substantial power in various electronic circuits.

Maximum Leakage Current: 2 mA

Low leakage current minimizes wasted energy and enhances overall efficiency in circuit operation, making it environmentally friendly.

Repetitive Peak Reverse Voltage: 800 V

The ability to withstand high reverse voltages makes this SCR suitable for use in high-voltage applications, increasing its versatility.

No. of Terminals: 3

Three terminals allow for straightforward connections and increased control options in circuit designs.

Package Style (Meter): IN-LINE

The in-line package style makes for easy integration into standard designs, enhancing usability across various products.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows for reliable performance in high-heat environments, making it suitable for industrial applications.

Trigger Device Type: SCR

As an SCR, this device provides efficient control of high-power applications, particularly in switching and modulation.

Minimum Operating Temperature: -40 °C

The ability to operate in low temperatures ensures reliability in harsh conditions, expanding the application range.

Terminal Finish: MATTE TIN

The matte tin finish provides good solderability and corrosion resistance, contributing to long-term reliability in connections.

Terminal Position: SINGLE

A single terminal position simplifies layout design on printed circuit boards, making assembly easier.

Maximum RMS On-state Current: 12 A

With a high RMS on-state current rating, this SCR can handle continuous load applications effectively.

Maximum DC Gate Trigger Voltage: 1.3 V

A low gate trigger voltage requirement enhances device efficiency by reducing energy consumption during operation.

Case Connection: ANODE

Having the anode connected facilitates simple circuit designs and efficient current flow management.

Repetitive Peak Off-state Voltage: 800 V

High off-state voltage rating ensures secure operation under potentially high-voltage conditions, providing circuit protection.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/us

High rate of rise allows for quick voltage transition, improving system responsiveness in applications requiring fast switching.

Maximum Holding Current: 40 mA

A manageable holding current ensures stable performance in the off-state, preventing unwanted triggering under noise conditions.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TN1215-800H attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

40 mA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

115 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

8 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

800 V

Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TN1215-800H Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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