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T405-600W-TR

STMicroelectronics

T405-600W-TR by STMicroelectronics

STMicroelectronics' T405-600W-TR is a TRIAC with 600V repetitive peak off-state voltage, 4A max RMS on-state current, and 1.3V max DC gate trigger voltage. It operates b/w -40 to 125 °C and finds applications in AC power control circuits for various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,945 parts In-Stock

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Anansix

USA . 2,833 parts In-Stock

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2,833

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Digiode

USA . 210 parts In-Stock

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210

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 941 parts In-Stock

1+ parts

$3.618

100+ parts

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$3.257

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941

$3.618

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$3.257

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MKK Technologies

India . 903 parts In-Stock

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$6.804

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903

$6.804

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DigiPath Technology Company

USA . 903 parts In-Stock

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$6.804

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903

$6.804

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Parana Technologies

USA . 2,315 parts In-Stock

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$4.326

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2,315

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$4.326

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Corphita

USA . 1,689 parts In-Stock

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1,689

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Overview

Upgrade your electronic devices with the high-quality T405-600W-TR by STMicroelectronics. Designed for reliability and efficiency, this TRIAC device offers superior performance in a variety of applications. From lighting control to motor speed regulation, this product delivers consistent results with minimal leakage current and a wide operating temperature range. Trust in STMicroelectronics to provide you with the best solution for your electronic needs. Experience the value and benefits that the T405-600W-TR brings to your projects today.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 5 mA

Low gate trigger current allows for efficient operation and reduced power consumption.

Maximum Leakage Current: 1 mA

Low leakage current ensures minimal power loss and enhances overall product efficiency.

Maximum Operating Temperature: 125 °C

High operating temperature range allows for reliable performance in a variety of environments.

Trigger Device Type: TRIAC

TRIAC technology provides precise control over current flow, making it a versatile choice for alternating current applications.

Minimum Operating Temperature: -40 °C

Wide operating temperature range enables the product to function in extremely low temperature conditions.

Terminal Finish: MATTE TIN

Matte tin finish offers corrosion resistance and ensures long-term durability for the product.

Maximum RMS On-state Current: 4 A

High on-state current capacity allows for efficient power handling and operation in various load conditions.

Maximum DC Gate Trigger Voltage: 1.3 V

Low gate trigger voltage reduces power consumption and enhances the efficiency of the product.

Repetitive Peak Off-state Voltage: 600 V

High off-state voltage rating allows for safe operation in high voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 20 V/us

Fast rate of rise of off-state voltage ensures quick response and protection against voltage surges.

Maximum Holding Current: 10 mA

High holding current capability ensures stable operation and prevents false triggering of the device.

Technical Specifications

Triode For Alternating Current (TRIAC) T405-600W-TR attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

20 V/us

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

10 mA

JESD-609 Code:

e3

Maximum Leakage Current:

1 mA

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Trigger Device Type:

Trade Compliance

T405-600W-TR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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