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T1650-600G

STMicroelectronics

T1650-600G by STMicroelectronics

STMicroelectronics T1650-600G is a single TRIAC with 16A RMS on-state current, 2mA DC gate trigger current, and 600V repetitive peak off-state voltage. Ideal for snubberless applications in temperature range -40 to 125 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 7,633 parts In-Stock

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Digiode

USA . 3,949 parts In-Stock

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3,949

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Anansix

USA . 2,648 parts In-Stock

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Vyrian

USA . 2,598 parts In-Stock

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IDEA Electronic Components Group

UK . 1,405 parts In-Stock

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$2.930

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$2.637

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$2.930

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$2.637

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MKK Technologies

India . 2,289 parts In-Stock

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$5.510

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2,289

$5.510

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DigiPath Technology Company

USA . 2,289 parts In-Stock

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$5.510

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$5.510

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A-Z Elektronik GmbH

Germany . 6,956 parts In-Stock

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Corphita

USA . 3,140 parts In-Stock

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Parana Technologies

USA . 1,945 parts In-Stock

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$3.504

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1,945

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$3.504

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Metaverse IC Inc.

Canada . 480 parts In-Stock

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480

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Kepictronics

USA . 380 parts In-Stock

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Overview

Discover the T1650-600G by STMicroelectronics, a high-quality TRIAC designed for a wide range of applications. With its reliable performance and innovative design, this product offers customers unparalleled value and benefits. From controlling power in appliances to regulating lighting systems, the T1650-600G provides exceptional functionality and efficiency. Trust in STMicroelectronics, a leading manufacturer known for producing top-of-the-line components, and experience the advantages of the T1650-600G for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for various applications.

Maximum DC Gate Trigger Current: 2 mA

The low gate trigger current ensures efficient operation and reliability of the triode.

Configuration: SINGLE

The single configuration simplifies installation and maintenance of the triode.

Surface Mount: YES

The surface mount capability allows for easy and flexible integration into different circuit designs.

Package Shape: RECTANGULAR

The rectangular shape of the package provides space-saving advantages and ease of mounting.

Maximum Leakage Current: 0.005 mA

The low leakage current contributes to the efficiency and reliability of the triode.

No. of Terminals: 2

Having only 2 terminals simplifies the wiring process and enhances the overall usability of the product.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact designs in various applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures the triode can withstand a wide range of environmental conditions.

Trigger Device Type: SNUBBERLESS TRIAC

The use of snubberless technology helps to reduce electromagnetic interference and noise in the system.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows for reliable performance even in cold environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and electrical conductivity.

Maximum RMS On-state Current: 16 A

The high maximum RMS on-state current rating indicates the triode's capability to handle heavy loads.

Maximum DC Gate Trigger Voltage: 1.3 V

The low gate trigger voltage ensures efficient operation and reduces power losses.

Repetitive Peak Off-state Voltage: 600 V

The high repetitive peak off-state voltage rating ensures reliable operation in high voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 1000 V/us

The high minimum critical rate of rise of off-state voltage ensures fast and reliable switching in the triode.

Maximum Holding Current: 50 mA

The high maximum holding current ensures the triac stays in the on-state without unintended switching.

Technical Specifications

Triode For Alternating Current (TRIAC) T1650-600G attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Commutation Voltage:

14 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

1000 V/us

Maximum DC Gate Trigger Current:

2 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

50 mA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Leakage Current:

.005 mA

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

16 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

Trade Compliance

T1650-600G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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