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T1635H-600G-TR

STMicroelectronics

T1635H-600G-TR by STMicroelectronics

T1635H-600G-TR by STMicroelectronics is a snubberless TRIAC designed for efficient AC control. It features a max RMS on-state current of 16 A, repetitive peak off-state voltage of 600 V, and operates b/w -40 °C to 150°C. Ideal for motor control and lighting applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,468 parts In-Stock

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4,468

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Vyrian

USA . 3,716 parts In-Stock

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3,716

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Anansix

USA . 2,777 parts In-Stock

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2,777

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 306 parts In-Stock

1+ parts

$2.018

100+ parts

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$1.816

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306

$2.018

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$1.816

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MKK Technologies

India . 426 parts In-Stock

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$3.794

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426

$3.794

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DigiPath Technology Company

USA . 426 parts In-Stock

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$3.794

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426

$3.794

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Parana Technologies

USA . 1,478 parts In-Stock

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$2.412

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$2.412

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Corphita

USA . 409 parts In-Stock

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409

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Overview

Elevate your designs with the T1635H-600G-TR from STMicroelectronics, a leader in semiconductor innovation. This snubberless TRIAC combines superior quality and reliability, perfect for high-performance applications like motor control and lighting systems. With a compact surface mount design and robust temperature range, it ensures seamless operation even in challenging environments. Trust STMicroelectronics to deliver cutting-edge solutions that enhance efficiency and longevity in your projects!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and resistance to environmental factors, making it suitable for various applications.

Maximum DC Gate Trigger Current: 35 mA

A maximum gate trigger current of 35 mA allows for efficient control of the TRIAC, enabling it to handle high currents with a lower triggering current.

Configuration: SINGLE

A single configuration allows for simpler circuit design and integration into electronic systems, making it an ideal choice for compact applications.

Surface Mount: YES

Being surface mount compatible facilitates easier assembly on printed circuit boards, contributing to reduced manufacturing costs and improved reliability.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space utilization on circuit boards, allowing for more components to be placed in close proximity.

Terminal Form: GULL WING

Gull wing terminal form offers enhanced soldering area and stability, improving connectivity and joint integrity during operation.

Maximum Leakage Current: 4.2 mA

A maximum leakage current of 4.2 mA minimizes power loss, making the TRIAC energy-efficient and suitable for power-sensitive applications.

No. of Terminals: 2

With only two terminals, this TRIAC simplifies connections and reduces the likelihood of miswiring, enhancing ease of use.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for compact designs, allowing it to fit into smaller enclosures without sacrificing performance.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C ensures reliable performance even in higher temperature environments, expanding its applicability.

Trigger Device Type: SNUBBERLESS TRIAC

As a snubberless TRIAC, this device provides superior performance in inductive loads, eliminating the need for external snubber circuits.

Minimum Operating Temperature: -40 °C

A minimum operating temperature of -40 °C enables the TRIAC to function effectively in extreme cold environments, enhancing versatility.

Terminal Position: SINGLE

A single terminal position simplifies layout and design, making it easier to integrate into various circuit configurations.

Maximum RMS On-state Current: 16 A

With a maximum RMS on-state current of 16 A, this TRIAC can handle substantial load currents, making it suitable for high-power applications.

Maximum DC Gate Trigger Voltage: 1.3 V

A low gate trigger voltage of 1.3 V allows for easy interfacing with low-voltage control circuits, improving compatibility and efficiency.

Case Connection: MAIN TERMINAL 2

The main terminal 2 case connection facilitates straightforward integration into circuitry, ensuring reliable signal and power transfer.

Repetitive Peak Off-state Voltage: 600 V

A peak off-state voltage of 600 V ensures the TRIAC can withstand high-voltage conditions, making it suitable for industrial and commercial applications.

Minimum Critical Rate of Rise of Off-state Voltage: 300 V/us

A minimum critical rate of rise of 300 V/us enhances the TRIAC's performance during switching, reducing the risk of voltage transients affecting operation.

Maximum Holding Current: 35 mA

With a maximum holding current of 35 mA, this TRIAC efficiently maintains conduction with low power requirements, improving overall circuit performance.

Technical Specifications

Triode For Alternating Current (TRIAC) T1635H-600G-TR attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

300 V/us

Maximum DC Gate Trigger Current:

35 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

35 mA

JESD-30 Code:

R-PSSO-G2

Maximum Leakage Current:

4.2 mA

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

16 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

T1635H-600G-TR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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