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T1635H-600G

STMicroelectronics

T1635H-600G by STMicroelectronics

T1635H-600G by STMicroelectronics is a snubberless TRIAC designed for AC control applications. It features a max RMS on-state current of 16 A, repetitive peak off-state voltage of 600 V, and operates b/w -40 °C to 150°C. Ideal for efficient power management in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,003 parts In-Stock

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8,003

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Digiode

USA . 1,917 parts In-Stock

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Anansix

USA . 794 parts In-Stock

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IDEA Electronic Components Group

UK . 1,912 parts In-Stock

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$2.489

100+ parts

-

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$2.240

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1,912

$2.489

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$2.240

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MKK Technologies

India . 1,575 parts In-Stock

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$4.680

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$4.680

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DigiPath Technology Company

USA . 1,575 parts In-Stock

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$4.680

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1,575

$4.680

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AZTECH Wire

Italy . 1,138 parts In-Stock

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$9.380

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1,138

$9.380

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Ampacity Inc.

Singapore . 1,219 parts In-Stock

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$21.100

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$21.100

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 24,797 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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Corphita

USA . 4,905 parts In-Stock

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4,905

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Parana Technologies

USA . 104 parts In-Stock

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$2.976

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104

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$2.976

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Overview

Elevate your projects with the T1635H-600G by STMicroelectronics, a robust snubberless TRIAC designed for exceptional performance in demanding applications. With unmatched quality from a leader in semiconductor innovation, this versatile component ensures reliable control of AC loads while maintaining energy efficiency. Experience seamless integration and high reliability, making it ideal for everything from lighting systems to motor controls—unlocking endless possibilities for your designs!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making it suitable for various applications.

Maximum DC Gate Trigger Current: 35 mA

A maximum gate trigger current of 35 mA allows for efficient control of the TRIAC, reducing power loss during operation.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it user-friendly for engineers.

Surface Mount: YES

Being a surface mount component facilitates automated assembly processes, enhancing production efficiency and saving space on PCBs.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space utilization on the printed circuit board, allowing for flexible circuit designs.

Terminal Form: GULL WING

Gull wing terminals provide reliable mechanical and electrical connections, ensuring stability and longevity in applications.

Maximum Leakage Current: 4.2 mA

A low maximum leakage current indicates minimal power loss, contributing to energy efficiency in system designs.

No. of Terminals: 2

With only two terminals, the TRIAC maintains simplicity in circuit design, making it easier to integrate into existing systems.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for compact designs, making it ideal for applications where space is at a premium.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature ensures that the TRIAC can perform reliably in demanding environments without degradation.

Trigger Device Type: SNUBBERLESS TRIAC

The snubberless design minimizes the need for external components, which simplifies circuit complexity and reduces costs.

Minimum Operating Temperature: -40 °C

The wide operating temperature range means the TRIAC can function in harsh conditions, increasing its versatility in applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish enhances solderability and improves the robustness of connections in the assembly.

Terminal Position: SINGLE

A single terminal position design allows for straightforward layout and connectivity in various applications.

Maximum RMS On-state Current: 16 A

A maximum RMS on-state current rating of 16 A enables the TRIAC to handle significant loads, making it suitable for high-power applications.

Maximum DC Gate Trigger Voltage: 1.3 V

A low gate trigger voltage requirement facilitates easier control circuit design and improves overall system compatibility.

Case Connection: MAIN TERMINAL 2

Main terminal connections ensure reliable power handling, further supporting high-performance applications.

Repetitive Peak Off-state Voltage: 600 V

The high repetitive peak off-state voltage provides reliable switching performance in various high-voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 300 V/us

A minimum critical rate of rise enables the TRIAC to manage fast voltage changes effectively, ensuring stable operation in dynamic environments.

Maximum Holding Current: 35 mA

A low maximum holding current allows the TRIAC to turn off efficiently, thus improving the performance of switching applications.

Technical Specifications

Triode For Alternating Current (TRIAC) T1635H-600G attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

300 V/us

Maximum DC Gate Trigger Current:

35 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

35 mA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Leakage Current:

4.2 mA

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

16 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

Trade Compliance

T1635H-600G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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