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T1013MH

STMicroelectronics

T1013MH by STMicroelectronics

T1013MH by STMicroelectronics is a single TRIAC with 10A RMS on-state current, 600V repetitive peak off-state voltage, and 50mA max DC gate trigger current. It is ideal for applications requiring precise AC power control in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Anansix

USA . 2,510 parts In-Stock

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2,510

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Digiode

USA . 2,071 parts In-Stock

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2,071

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Vyrian

USA . 1,416 parts In-Stock

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A&K Electronics

USA . 436 parts In-Stock

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436

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Rotakorn

Sweden . 436 parts In-Stock

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436

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Bristol Electronics

USA . 436 parts In-Stock

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436

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LittleDiode

UK . 1 parts In-Stock

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IDEA Electronic Components Group

UK . 191 parts In-Stock

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$4.193

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$3.774

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191

$4.193

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$3.774

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MKK Technologies

India . 2,314 parts In-Stock

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$7.885

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$7.885

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DigiPath Technology Company

USA . 2,314 parts In-Stock

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$7.885

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Corphita

USA . 3,294 parts In-Stock

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Parana Technologies

USA . 1,673 parts In-Stock

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$5.014

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$5.014

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Overview

Unlock the power of efficient AC control with the T1013MH by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics ensures top-notch quality and reliability in their products. The T1013MH is a versatile TRIAC with a range of applications, from dimmer switches to motor speed control. With a maximum RMS on-state current of 10A and a repetitive peak off-state voltage of 600V, this TRIAC delivers superior performance. Trust in STMicroelectronics for cutting-edge technology that brings value and benefits to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the product.

Maximum DC Gate Trigger Current: 50 mA

Allows for precise control over the switching of the TRIAC, ensuring efficient operation.

Configuration: SINGLE

Simplified design with a single configuration makes installation and operation straightforward.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into existing circuitry.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections for stable performance.

Maximum Leakage Current: 2 mA

Low leakage current helps in reducing power consumption and heat generation.

No. of Terminals: 3

Simple 3-terminal design for ease of connection and setup.

Package Style (Meter): FLANGE MOUNT

Flange mount design allows for secure mounting and efficient heat dissipation.

Maximum Operating Temperature: 125 °C

High operating temperature range ensures reliable performance in various environments.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

4-quadrant logic level TRIAC provides flexibility in controlling and switching AC power.

Minimum Operating Temperature: -40 °C

Wide range of operating temperature allows for use in extreme conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides corrosion resistance and reliable electrical connections.

Terminal Position: SINGLE

Single terminal position for easy installation and maintenance.

Maximum RMS On-state Current: 10 A

High RMS on-state current rating allows for efficient power handling.

Maximum DC Gate Trigger Voltage: 2.5 V

Low gate trigger voltage ensures efficient control over TRIAC switching.

Repetitive Peak Off-state Voltage: 600 V

High off-state voltage rating for reliable performance in high voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

Fast rate of rise of off-state voltage allows for quick response to load changes.

Maximum Holding Current: 150 mA

High holding current rating helps in maintaining conduction once triggered.

Technical Specifications

Triode For Alternating Current (TRIAC) T1013MH attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

150 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

10 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

T1013MH Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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