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T1013DH

STMicroelectronics

T1013DH by STMicroelectronics

T1013DH by STMicroelectronics is a single TRIAC with 10A max RMS on-state current, 2.5V max DC gate trigger voltage, and 400V repetitive peak off-state voltage. It is used in applications requiring a 4-quadrant logic level TRIAC for AC power control at temperatures ranging from -45 °C to 125°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,697 parts In-Stock

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4,697

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Vyrian

USA . 1,143 parts In-Stock

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1,143

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Anansix

USA . 524 parts In-Stock

1+ parts

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524

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LittleDiode

UK . 22 parts In-Stock

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22

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 330 parts In-Stock

1+ parts

$4.350

100+ parts

-

1k+ parts

$3.915

10k+ parts

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330

$4.350

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$3.915

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MKK Technologies

India . 2,027 parts In-Stock

1+ parts

$8.179

100+ parts

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2,027

$8.179

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DigiPath Technology Company

USA . 2,027 parts In-Stock

1+ parts

$8.179

100+ parts

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2,027

$8.179

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Corphita

USA . 4,747 parts In-Stock

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4,747

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Parana Technologies

USA . 687 parts In-Stock

1+ parts

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100+ parts

$5.201

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687

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$5.201

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Overview

Unleash the power of efficiency with the T1013DH from STMicroelectronics, a top-of-the-line TRIAC device designed for optimal performance. Manufactured with precision and reliability in mind, this versatile component is perfect for a wide range of applications. Whether you're looking to control lighting, heating, or motor speed, the T1013DH delivers seamless operation and outstanding results. Simplify your projects and enhance your systems with the exceptional value and benefits that this TRIAC offers. Trust in STMicroelectronics to provide you with the quality and innovation you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good insulation properties and is resistant to heat and moisture, making the product durable and reliable.

Maximum DC Gate Trigger Current: 50 mA

Allows for efficient control of the TRIAC, ensuring smooth switching operations.

Configuration: SINGLE

Simplified design and installation process, making it user-friendly.

Package Shape: RECTANGULAR

Compact shape for easy integration into various electronic devices and circuits.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering onto circuit boards, ensuring secure connections.

Maximum Leakage Current: 2 mA

Low leakage current ensures minimal power loss and improved efficiency.

No. of Terminals: 3

Simple three-terminal connection setup for straightforward installation.

Package Style (Meter): FLANGE MOUNT

Secure mounting option for stable integration into systems.

Maximum Operating Temperature: 125 °C

Wide temperature range for versatile usage in different environments.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

Provides precise and reliable triggering capabilities for optimal performance.

Minimum Operating Temperature: -45 °C

Capable of operating in extreme low-temperature conditions, expanding its usability.

Terminal Finish: MATTE TIN

Corrosion-resistant finish for long-lasting durability.

Terminal Position: SINGLE

Simplified terminal layout for easy connection setup.

Maximum RMS On-state Current: 10 A

High current rating for handling heavy loads with ease.

Maximum DC Gate Trigger Voltage: 2.5 V

Low trigger voltage requirement for efficient control and power management.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage capability for reliable performance under varying load conditions.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

Quick response to voltage changes for precise control and protection of connected devices.

Maximum Holding Current: 150 mA

Sustained current holding capability for stable operation during extended usage.

Technical Specifications

Triode For Alternating Current (TRIAC) T1013DH attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

150 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-45 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

10 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

T1013DH Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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