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BTW69-1000RG

STMicroelectronics

BTW69-1000RG by STMicroelectronics

BTW69-1000RG by STMicroelectronics is a Silicon Controlled Rectifier with 2V max on-state voltage, 80mA max DC gate trigger current, and 525A non-repetitive peak on-state current. It is used in applications requiring high power switching such as industrial motor drives and power supplies due to its robust performance and wide operating temperature range from -45 °C to 125°C.

Median Price

$8.640

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 8 parts In-Stock

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$9.490

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$6.780

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8

$9.490

$6.780

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Vyrian

USA . 2,951 parts In-Stock

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Digiode

USA . 1,410 parts In-Stock

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1,410

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Anansix

USA . 767 parts In-Stock

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Chip Stock

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588

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Rutronik

Germany . 540 parts In-Stock

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$7.790

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$6.780

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540

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$7.790

$6.780

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ComSIT Distribution GmbH

Germany . 360 parts In-Stock

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360

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Distributors (Availability)

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Native Components

USA . 833 parts In-Stock

1+ parts

$1.490

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833

$1.490

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Northwest PG Solutions

USA . 1,157 parts In-Stock

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$1.639

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1,157

$1.639

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Corohmni

South Africa . 200 parts In-Stock

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$3.031

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200

$3.031

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IDEA Electronic Components Group

UK . 1,148 parts In-Stock

1+ parts

$3.789

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$3.411

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$3.789

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$3.411

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$3.918

100+ parts

$3.565

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$3.213

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350

$3.918

$3.565

$3.213

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MKK Technologies

India . 834 parts In-Stock

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$7.126

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834

$7.126

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DigiPath Technology Company

USA . 834 parts In-Stock

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$7.126

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$7.126

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AZTECH Wire

Italy . 279 parts In-Stock

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$19.250

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$19.250

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Component Stockers USA

USA . 590 parts In-Stock

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$99.990

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Kepictronics

USA . 13,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,883 parts In-Stock

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Corphita

USA . 4,044 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,922 parts In-Stock

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Perfect Parts

USA . 2,284 parts In-Stock

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2,284

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Parana Technologies

USA . 1,359 parts In-Stock

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$4.531

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$4.531

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RC Electronics

USA . 80 parts In-Stock

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Overview

Looking for a reliable and high-quality Silicon Controlled Rectifier (SCR) for your electronic applications? Look no further than the BTW69-1000RG by STMicroelectronics. With a maximum on-state voltage of 2V and a non-repetitive peak on-state current of 525A, this SCR is designed to meet your needs for power control and regulation. Whether you are working on industrial machinery, power supplies, or lighting systems, this SCR provides the performance and durability you can count on. Trust in STMicroelectronics' reputation for excellence and choose the BTW69-1000RG for your next project.

Feature Benefit Bullets

Maximum On-state Voltage: 2 V

Low on-state voltage allows for efficient conduction, reducing power loss and improving overall performance.

Maximum DC Gate Trigger Current: 80 mA

High gate trigger current ensures reliable and consistent triggering of the SCR, enhancing the stability of the circuit.

Non Repetitive Peak On-state Current: 525 A

Ability to handle high peak currents makes this SCR suitable for applications requiring robust and reliable performance under heavy loads.

Maximum On-state Current: 25 A

With a high maximum on-state current, this SCR can handle significant current flow without overheating or compromising operation.

Maximum Leakage Current: 6 mA

Low leakage current minimizes power loss when the SCR is in the off state, leading to improved energy efficiency of the circuit.

Maximum Operating Temperature: 125 °C

With a wide operating temperature range, this SCR can function reliably in various environmental conditions, making it versatile and durable.

Trigger Device Type: SCR

Being an SCR, this device offers superior performance in controlling and regulating AC power, making it a preferred choice for many industrial applications.

Maximum DC Gate Trigger Voltage: 3 V

Low gate trigger voltage facilitates easy and quick activation of the SCR, enabling efficient control over the switching process in the circuit.

Repetitive Peak Off-state Voltage: 1000 V

High off-state voltage rating ensures the SCR can withstand voltage spikes and surges without breakdown, enhancing the reliability of the circuit.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

Fast rate of rise of off-state voltage allows the SCR to respond quickly to changes in the circuit, improving overall performance and stability.

Maximum Holding Current: 150 mA

High holding current ensures the SCR remains in the on-state even after the gate trigger signal is removed, providing stability and reliability in the circuit operation.

Nominal Circuit Commutated Turn-off Time: 100 us

Fast turn-off time enables quick switching of the SCR from on to off state, allowing for precise control and efficient operation in various applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) BTW69-1000RG attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Nominal Circuit Commutated Turn-off Time:

100 us

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

80 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

150 mA

Maximum Leakage Current:

6 mA

Non Repetitive Peak On-state Current:

525 A

Maximum On-state Voltage:

2 V

Maximum On-state Current:

25 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-45 Cel

Repetitive Peak Off-state Voltage:

1000 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

BTW69-1000RG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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