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SKIIP03NEB066V3

Semikron International

SKIIP03NEB066V3 by Semikron International

SKIIP03NEB066V3 by Semikron International is an N-CHANNEL IGBT with 600V VCEsat, 25A IC, and 200ns toff. Ideal for POWER CONTROL applications due to its COMPLEX configuration and SILICON material. Operates at up to 175°C with UL RECOGNIZED standard compliance.

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Overview

Transform the way you power control applications with the SKIIP03NEB066V3 by Semikron International. As a leading manufacturer in insulated gate bipolar transistors, Semikron International delivers quality and reliability in every product they create. Ideal for a wide range of power control applications, this N-channel transistor offers a complex configuration with 7 elements to optimize performance. With a maximum collector-emitter voltage of 600V and a nominal turn-off time of just 200ns, this transistor provides exceptional value and benefits to customers seeking efficient power control solutions. Upgrade your power control systems with the SKIIP03NEB066V3 and experience the advantages that Semikron International brings to the table.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower ON-state voltage drop and higher input impedance, making them suitable for high power applications.

Maximum VCEsat: 1.85 V

Low VCEsat value indicates lesser power dissipation during ON state, resulting in higher efficiency.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring reliable and efficient operation in those scenarios.

Maximum Collector-Emitter Voltage: 600 V

Suitable for high voltage applications, providing a wider range of potential uses for the IGBT.

Nominal Turn On Time (ton): 50 ns

Fast turn-on time allows for quick switching, enabling precise control in power applications.

Maximum Collector Current (IC): 25 A

Capable of handling high current levels, making it ideal for power control applications with significant current requirements.

Reference Standard: UL RECOGNIZED

UL recognized certification ensures compliance with safety standards, providing peace of mind for users regarding product safety.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SKIIP03NEB066V3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Semikron International

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X18

No. of Elements:

7

No. of Terminals:

18

Maximum Operating Temperature:

175 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

200 ns

Nominal Turn On Time (ton):

50 ns

Maximum VCEsat:

1.85 V

Trade Compliance

SKIIP03NEB066V3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Semikron International

Semikron Danfoss is a family-owned business, merged by SEMIKRON and Danfoss Silicon Power in 2022. In a world that is going electric, Semikron Danfoss technologies are more relevant than ever. With our innovative solutions for automotive, industrial and renewable applications we help the world utilize energy more efficiently and sustainable and thus to significantly reduce overall CO2 emissions – one of the biggest challenges the world faces today. Our power electronics product offerings include semiconductor devices, power modules, stacks and systems. We take care of our employees and create value for our customers by investing significantly in innovation, technology, capacity, and service to deliver best-in-industry performance and for a sustainable future.

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