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SKIIP36NAB126V1

Semikron International

SKIIP36NAB126V1 by Semikron International

Semikron International's SKIIP36NAB126V1 is an N-CHANNEL IGBT with 1200V VCEsat, 88A IC, and 105ns ton. Ideal for POWER CONTROL applications due to its COMPLEX configuration and fast 480ns toff. This RECTANGULAR package with 68 terminals operates at up to 150°C, meeting IEC-60747-1 & UL standards.

Median Price

$224.088

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Continental Prestige Electronics

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Overview

Get ready to elevate your power control applications with the SKIIP36NAB126V1 by Semikron International. As a trusted leader in Insulated Gate Bipolar Transistors (IGBT), Semikron delivers unmatched quality and reliability. This N-CHANNEL transistor boasts a maximum Collector-Emitter Voltage of 1200V and a maximum Collector Current of 88A, making it ideal for high-power tasks. With a fast Turn On Time of just 105ns and advanced technology, this product ensures efficiency and precision in your projects. Choose Semikron for superior performance and lasting value in every application.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs typically have lower conduction losses and higher efficiency compared to P-Channel IGBTs, making them a good choice for power control applications.

Maximum VCEsat: 2.1 V

Lower VCEsat value indicates lower saturation voltage drop, leading to reduced power losses and higher efficiency in power control applications.

Nominal Turn Off Time (toff): 480 ns

Faster turn-off time helps in reducing switching losses and improving overall performance of power control circuits.

Maximum Collector-Emitter Voltage: 1200 V

High VCE rating allows for operation in high voltage applications, making the IGBT suitable for a wide range of power control scenarios.

Maximum Collector Current (IC): 88 A

High collector current rating enables the IGBT to handle large power loads, making it suitable for high power applications in power control.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SKIIP36NAB126V1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Semikron International

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X68

JESD-609 Code:

e3/e4

No. of Elements:

7

No. of Terminals:

68

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Reference Standard:

IEC-60747-1; UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN/SILVER

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

480 ns

Nominal Turn On Time (ton):

105 ns

Maximum VCEsat:

2.1 V

Trade Compliance

SKIIP36NAB126V1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Semikron International

Semikron Danfoss is a family-owned business, merged by SEMIKRON and Danfoss Silicon Power in 2022. In a world that is going electric, Semikron Danfoss technologies are more relevant than ever. With our innovative solutions for automotive, industrial and renewable applications we help the world utilize energy more efficiently and sustainable and thus to significantly reduce overall CO2 emissions – one of the biggest challenges the world faces today. Our power electronics product offerings include semiconductor devices, power modules, stacks and systems. We take care of our employees and create value for our customers by investing significantly in innovation, technology, capacity, and service to deliver best-in-industry performance and for a sustainable future.

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