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R1LV1616RSA-7SI#B0

Renesas Electronics

R1LV1616RSA-7SI#B0 by Renesas Electronics

Renesas Electronics' R1LV1616RSA-7SI#B0 is a 1MX16 SRAM with an operating voltage of 3/3.3V and max access time of 70ns. It is commonly used in industrial applications requiring high-speed, asynchronous memory.

Median Price

$98.300

Lifecycle Status

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4

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< 1k

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Chip1Stop

Japan . 5 parts In-Stock

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Nova Conductors

Japan . 15 parts In-Stock

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Chip Stock

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Vyrian

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AZTECH Wire

Italy . 430 parts In-Stock

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$11.457

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Ampacity Inc.

Singapore . 5 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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Continental Prestige Electronics

USA . 1,939 parts In-Stock

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Microchip USA

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Argo Parts USA

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Overview

Discover the R1LV1616RSA-7SI#B0 by Renesas Electronics, a high-quality SRAM that offers exceptional performance and reliability. Renowned for their expertise in semiconductor manufacturing, Renesas Electronics ensures that this product exceeds industry standards. With its compact design and versatile applications, this SRAM is perfect for various devices and systems. Experience the value it brings with its common input/output type, low power consumption, and wide operating temperature range. Trust in Renesas Electronics to deliver a superior memory solution that enhances your product's performance and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and protection for the internal components of the SRAM, making it suitable for various environments.

Surface Mount: YES

Ease of installation and assembly on circuit boards, saving time and effort in the manufacturing process.

Maximum Operating Temperature: 85 °C

Can withstand high operating temperatures, ensuring reliable performance even in harsh conditions.

Organisation: 1MX16

Offers a large memory capacity with a data width of 16 bits, suitable for applications requiring fast data processing and storage.

Technology: CMOS

Utilizes Complementary Metal-Oxide-Semiconductor technology for efficient power consumption and high-speed operation.

Maximum Access Time: 70 ns

Provides quick access to stored data, ideal for applications demanding fast read and write operations.

Technical Specifications

SRAM R1LV1616RSA-7SI#B0 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

70 ns

Alternate Memory Width:

8

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G48

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

2

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

40 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Trade Compliance

R1LV1616RSA-7SI#B0 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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