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R1LV0416DSB-7LI#S0

Renesas Electronics

R1LV0416DSB-7LI#S0 by Renesas Electronics

Renesas Electronics' R1LV0416DSB-7LI#S0 is a 256Kx16 SRAM with 3.3V supply, operating at -40 to 85°C. Featuring 70ns access time, it has a memory density of 4Mbit and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable data storage in a compact small outline package.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Bristol Electronics

USA . 3,662 parts In-Stock

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Vyrian

USA . 562 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Corohmni

South Africa . 784 parts In-Stock

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$2.238

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Advanced Electronics

New Zealand . 270 parts In-Stock

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$4.148

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$3.775

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$3.401

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270

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Aztec Data Supply Inc.

USA . 1,053 parts In-Stock

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$4.265

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AZTECH Wire

Italy . 793 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,791 parts In-Stock

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Kepictronics

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Continental Prestige Electronics

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Authorized Procurement Solutions

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S.R.D Solutions

India . 3,000 parts In-Stock

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Argo Parts USA

USA . 742 parts In-Stock

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Aranea Global

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Overview

Enhance your electronic devices with the R1LV0416DSB-7LI#S0 SRAM from Renesas Electronics, a leading manufacturer known for delivering high-quality components. This versatile memory chip offers reliable performance in various industrial applications, ensuring seamless operation and efficient data storage. With a compact package design and advanced CMOS technology, this SRAM provides a fast access time of 70ns and low power consumption, making it an ideal choice for demanding projects. Upgrade your systems with the R1LV0416DSB-7LI#S0 to experience enhanced functionality and reliability like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long lifespan for the product.

Surface Mount: YES

Allows for easy installation onto circuit boards, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 3

Operates efficiently at a standard voltage level, reducing the risk of damage from power fluctuations.

No. of Terminals: 44

Offers a sufficient number of connections for integrating the product into various systems and configurations.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for industrial or harsh environments.

Memory Density: 4194304 bit

Provides a large storage capacity for data, making it ideal for applications requiring extensive memory usage.

Maximum Access Time: 70 ns

Delivers fast access speeds, enabling quick retrieval of data for improved performance.

Technical Specifications

SRAM R1LV0416DSB-7LI#S0 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G44

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

44

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

25 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Trade Compliance

R1LV0416DSB-7LI#S0 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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