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R1LV1616RSA-7SI#S0

Renesas Electronics

R1LV1616RSA-7SI#S0 by Renesas Electronics

Renesas Electronics' R1LV1616RSA-7SI#S0 is a 1MX16 SRAM with 3/3.3V supply, 70ns access time, and 48 terminals in a small outline package. Ideal for industrial applications requiring fast, asynchronous memory operations with common I/O type and 16-bit memory width.

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Vyrian

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Ampacity Inc.

Singapore . 1,382 parts In-Stock

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AZTECH Wire

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Argo Parts USA

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Continental Prestige Electronics

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Aranea Global

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Microchip USA

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Overview

Upgrade your electronics with the Renesas Electronics R1LV1616RSA-7SI#S0 SRAM memory chip, known for its top-notch quality and reliable performance. Renowned for their innovative technology, Renesas Electronics delivers exceptional products that cater to a wide range of applications. With a sleek design and efficient operation, this SRAM chip offers customers a valuable solution for their memory needs. Experience the benefits of fast access times and high memory density without compromising on reliability. Trust Renesas Electronics to provide you with cutting-edge technology that enhances your devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and reliability for the package, ensuring the product can withstand various environmental conditions.

Surface Mount: YES

Surface mount capability allows for easy installation and integration into circuit boards, saving space and simplifying the manufacturing process.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible timing and communication between the SRAM and other components in the system.

Power Supplies (V): 3/3.3

Compatible with standard voltage supplies of 3V or 3.3V, making it easy to power and integrate into existing systems.

No. of Terminals: 48

Having 48 terminals enables efficient data transfer and communication with other components in the system.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this SRAM can function reliably in harsh environments.

Memory Density: 16777216 bit

High memory density allows for storing a large amount of data in a compact form factor, making it suitable for memory-intensive applications.

Maximum Access Time: 70 ns

Fast access time of 70 nanoseconds ensures quick data retrieval and processing, enhancing the overall performance of the product.

Technical Specifications

SRAM R1LV1616RSA-7SI#S0 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

70 ns

Alternate Memory Width:

8

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G48

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

2

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

40 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Trade Compliance

R1LV1616RSA-7SI#S0 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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