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R1LV0416DSB-7LI

Renesas Electronics

R1LV0416DSB-7LI by Renesas Electronics

Renesas Electronics' R1LV0416DSB-7LI is a 256Kx16 SRAM with 70ns access time, operating at 3V. It features a small outline package, industrial temperature grade, and common I/O type. Ideal for applications requiring fast and reliable memory storage in harsh environments.

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Vyrian

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ComSIT Distribution GmbH

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Nova Conductors

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Legend Electronics Inc.

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Corohmni

South Africa . 1 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,878 parts In-Stock

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AZTECH Wire

Italy . 194 parts In-Stock

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Continental Prestige Electronics

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A-Z Elektronik GmbH

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Argo Parts USA

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Aranea Global

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Overview

Unlock the power of reliable and high-performance memory with the R1LV0416DSB-7LI by Renesas Electronics. As a leader in the industry, Renesas Electronics ensures top-notch quality and innovation in every product. This SRAM device is perfect for a wide range of applications, offering customers seamless performance and efficiency. Experience the value of fast access times, low power consumption, and dependable data storage with the R1LV0416DSB-7LI. Upgrade your systems with this exceptional memory solution and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and reliability to the product.

Surface Mount: YES

Allows for easy installation and reduced space requirements on PCB.

Operating Mode: ASYNCHRONOUS

Enables independent operation and flexibility in data transfer.

Nominal Supply Voltage / Vsup (V): 3

Compatible with common supply voltages, making it suitable for various applications.

No. of Terminals: 44

Sufficient terminals for connection and integration with other components.

Maximum Operating Temperature: 85 °C

Can operate at high temperatures, suitable for industrial environments.

Memory Width: 16

Provides a good balance between data storage capacity and access speed.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Maximum Access Time: 70 ns

Fast access time ensures quick data retrieval and processing.

Technical Specifications

SRAM R1LV0416DSB-7LI attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e6

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

44

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

25 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Trade Compliance

R1LV0416DSB-7LI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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