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R1LV0816ASA-5SI#B0

Renesas Electronics

R1LV0816ASA-5SI#B0 by Renesas Electronics

Renesas Electronics R1LV0816ASA-5SI#B0 is an 8Mbit SRAM with 512Kx16 organization, operating in industrial temperature range of -40 to 85°C. It features a parallel interface, 70ns access time, and low power consumption at Vsup ranging from 2.4V to 2.7V. Ideal for applications requiring fast and reliable data storage in compact designs.

Median Price

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Vyrian

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Pegasus Components GmbH

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Nova Conductors

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AZTECH Wire

Italy . 874 parts In-Stock

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Microchip USA

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Continental Prestige Electronics

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Argo Parts USA

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Overview

Unlock the power of advanced technology with the R1LV0816ASA-5SI#B0 by Renesas Electronics. This high-quality SRAM offers unparalleled reliability and performance, making it the perfect choice for industrial applications where speed and efficiency are key. With a compact design and wide operating temperature range, this memory module is versatile and dependable. Trust Renesas Electronics to deliver cutting-edge solutions that meet your needs and exceed your expectations. Experience the difference with the R1LV0816ASA-5SI#B0.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material that can withstand various environmental conditions, ensuring reliability and longevity of the product.

No. of Terminals: 48

Sufficient number of terminals for connectivity and data transfer, allowing for efficient operation of the device.

Operating Mode: ASYNCHRONOUS

Provides asynchronous operation, which allows for independent transactions and efficient utilization of memory resources.

Memory Density: 8388608 bit

High memory density enables storage of a large amount of data, making the product suitable for applications requiring extensive memory capacity.

Maximum Access Time: 70 ns

Fast access time ensures quick retrieval of data, enhancing the overall performance and responsiveness of the product.

Technical Specifications

SRAM R1LV0816ASA-5SI#B0 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

70 ns

Additional Features:

ACCESS TIME 55NS AVAILABLE WITH 2.7V TO 3.6V SUPPLY RANGE

Alternate Memory Width:

8

JESD-30 Code:

R-PDSO-G48

Length:

18.4 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

48

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

2.7 V

Minimum Supply Voltage (Vsup):

2.4 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

12 mm

Trade Compliance

R1LV0816ASA-5SI#B0 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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