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R1LV1616HBG-4SI#B0

Renesas Electronics

R1LV1616HBG-4SI#B0 by Renesas Electronics

Renesas Electronics' R1LV1616HBG-4SI#B0 is a 1MX16 SRAM with 45ns access time, operating at -40 to 85°C. It has a memory density of 16777216 bits and uses CMOS technology. Suitable for industrial applications, it features a parallel interface and operates on a supply voltage range of 2.7V to 3.6V.

Median Price

$11.228

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 4,752 parts In-Stock

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$9.980

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$8.930

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$8.400

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$8.400

Verical

USA . 4,752 parts In-Stock

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$12.475

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$11.162

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$10.500

4,752

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$12.475

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$10.500

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Vyrian

USA . 4,507 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Semtec, LLC

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40

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LWI Electronics Inc

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Corohmni

South Africa . 433 parts In-Stock

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$4.804

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Aztec Data Supply Inc.

USA . 3,376 parts In-Stock

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$5.320

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Ampacity Inc.

Singapore . 4,519 parts In-Stock

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$9.440

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Argo Parts USA

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Authorized Procurement Solutions

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A-Z Elektronik GmbH

Germany . 659 parts In-Stock

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Microchip USA

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Continental Prestige Electronics

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Bastille Electronics

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Overview

Experience superior performance and reliability with the R1LV1616HBG-4SI#B0 by Renesas Electronics. This top-of-the-line SRAM memory offers exceptional quality and is designed for industrial applications, providing customers with a durable and efficient solution for their projects. Benefit from the advanced technology and high memory density of this product, ensuring fast access times and seamless operation. Trust Renesas Electronics to deliver cutting-edge memory solutions that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the SRAM, ensuring longevity and ease of handling during installation.

Surface Mount: YES

Allows for easy and convenient mounting onto circuit boards, saving space and simplifying the assembly process.

Operating Mode: ASYNCHRONOUS

Enables independent operation without requiring synchronization signals, offering flexibility in data processing applications.

Nominal Supply Voltage / Vsup (V): 3

Operates efficiently at a standard supply voltage of 3V, making it compatible with a wide range of electronic devices.

Maximum Operating Temperature: 85 °C

Can withstand high operating temperatures, ensuring reliability and performance under demanding conditions.

Memory Width: 16

Provides a high data bandwidth for faster data transfer and processing, enhancing the overall performance of the SRAM.

Technical Specifications

SRAM R1LV1616HBG-4SI#B0 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

45 ns

JESD-30 Code:

R-PBGA-B48

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Shape:

Package Style (Meter):

GRID ARRAY

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Position:

BOTTOM

Trade Compliance

R1LV1616HBG-4SI#B0 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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