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R1LV3216RSA-5SI

Renesas Electronics

R1LV3216RSA-5SI by Renesas Electronics

R1LV3216RSA-5SI by Renesas Electronics is a 2MX16 SRAM with 3V supply, operating at -40 to 85 °C. It has a memory density of 33554432 bit and offers 70 ns access time. Ideal for industrial applications requiring fast and reliable data storage in a compact small outline package.

Median Price

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2

In-Stock Inventory

1k+

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Vyrian

USA . 838 parts In-Stock

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Nova Conductors

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Aztec Data Supply Inc.

USA . 4,649 parts In-Stock

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$2.156

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Corohmni

South Africa . 1,096 parts In-Stock

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AZTECH Wire

Italy . 263 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

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Aranea Global

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Overview

Experience unparalleled speed and reliability with the R1LV3216RSA-5SI by Renesas Electronics, a leading manufacturer in the industry. This SRAM offers seamless performance in a wide range of applications, delivering value and efficiency to customers. With its advanced technology and industrial-grade quality, this memory IC is perfect for those seeking superior memory density and fast access times. Elevate your projects with the R1LV3216RSA-5SI and enjoy the benefits of cutting-edge innovation at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the SRAM, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy installation and integration into electronic circuits or PCBs.

Operating Mode: ASYNCHRONOUS

Enables independent operation of memory cells, optimizing efficiency and performance.

Nominal Supply Voltage / Vsup (V): 3

Works efficiently at a standard voltage level, ensuring stable operation.

Memory Density: 33554432 bit

Provides a high-density memory solution, ideal for storing large amounts of data.

Technical Specifications

SRAM R1LV3216RSA-5SI attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

70 ns

Alternate Memory Width:

8

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G48

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

48

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Standby Current:

.000012 Amp

Minimum Standby Voltage:

2.7 V

Sub-Category:

SRAMs

Maximum Supply Current:

55 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Trade Compliance

R1LV3216RSA-5SI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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