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SPZT2907AT1G

Onsemi

SPZT2907AT1G by Onsemi

SPZT2907AT1G by Onsemi is a PNP BJT transistor with 60V VCEO, 0.6A IC, and 200MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. With a max power dissipation of 1.5W and operating temp up to 150°C, it meets AEC-Q101 standards.

Median Price

$0.379

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 277 parts In-Stock

1+ parts

$0.706

100+ parts

$0.699

1k+ parts

$0.697

10k+ parts

-

277

$0.706

$0.699

$0.697

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Mouser Electronics

USA . 39,284 parts In-Stock

1+ parts

$0.870

100+ parts

$0.391

1k+ parts

$0.226

10k+ parts

$0.162

39,284

$0.870

$0.391

$0.226

$0.162

Adafruit Industries

USA . 1,000 parts In-Stock

1+ parts

$1.669

100+ parts

$1.585

1k+ parts

$1.585

10k+ parts

-

1,000

$1.669

$1.585

$1.585

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Chip1Stop

Japan . 14,141 parts In-Stock

1+ parts

-

100+ parts

$0.379

1k+ parts

$0.372

10k+ parts

$0.368

14,141

-

$0.379

$0.372

$0.368

Rochester

USA . 3,125 parts In-Stock

1+ parts

-

100+ parts

$0.173

1k+ parts

$0.144

10k+ parts

$0.128

3,125

-

$0.173

$0.144

$0.128

Element14

Singapore . 2,850 parts In-Stock

1+ parts

-

100+ parts

$0.258

1k+ parts

$0.194

10k+ parts

$0.157

2,850

-

$0.258

$0.194

$0.157

Verical

USA . 2,600 parts In-Stock

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-

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$0.160

2,600

-

-

-

$0.160

Distributors (In-Stock)

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Digiode

USA . 306 parts In-Stock

1+ parts

$0.134

100+ parts

-

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306

$0.134

-

-

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Nova Conductors

Japan . 700 parts In-Stock

1+ parts

$0.148

100+ parts

-

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700

$0.148

-

-

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Bristol Electronics

USA . 709 parts In-Stock

1+ parts

$0.600

100+ parts

$0.300

1k+ parts

$0.210

10k+ parts

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709

$0.600

$0.300

$0.210

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Vyrian

USA . 31,302 parts In-Stock

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31,302

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NAC Semi

USA . 18,000 parts In-Stock

1+ parts

-

100+ parts

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$0.288

10k+ parts

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18,000

-

-

$0.288

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Flip Electronics

USA . 10,000 parts In-Stock

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10,000

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Microfarads

USA . 410 parts In-Stock

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410

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ACDS - Activité Composants Distribution Service

France . 256 parts In-Stock

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256

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Holdelec - ElecDif-Pro

France . 256 parts In-Stock

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256

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Prism Electronics

USA . 200 parts In-Stock

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200

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 45,266 parts In-Stock

1+ parts

$0.082

100+ parts

-

1k+ parts

-

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45,266

$0.082

-

-

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Corohmni

South Africa . 263 parts In-Stock

1+ parts

$0.096

100+ parts

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263

$0.096

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Semicontronic

India . 27,297 parts In-Stock

1+ parts

$0.120

100+ parts

$0.117

1k+ parts

$0.116

10k+ parts

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27,297

$0.120

$0.117

$0.116

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Corphita

USA . 2,365 parts In-Stock

1+ parts

$0.127

100+ parts

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2,365

$0.127

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Argo Parts USA

USA . 3,321 parts In-Stock

1+ parts

$0.148

100+ parts

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1k+ parts

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10k+ parts

$0.143

3,321

$0.148

-

-

$0.143

Aztec Data Supply Inc.

USA . 209 parts In-Stock

1+ parts

$0.612

100+ parts

-

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209

$0.612

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$1.669

100+ parts

$1.585

1k+ parts

$1.585

10k+ parts

-

1,000

$1.669

$1.585

$1.585

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Perfect Parts

USA . 420,000 parts In-Stock

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GreenTree Electronics

Israel . 90,000 parts In-Stock

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Eastek

USA . 78,000 parts In-Stock

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$0.171

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78,000

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-

$0.171

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Continental Prestige Electronics

USA . 31,000 parts In-Stock

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$0.116

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31,000

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$0.116

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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Lixinc

USA . 18,842 parts In-Stock

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18,842

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Kulean Microsystems

USA . 7,368 parts In-Stock

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7,368

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TANS Electronics

Latvia . 6,123 parts In-Stock

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6,123

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Problanco Electronics

Mexico . 5,249 parts In-Stock

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5,249

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UHIMA Technologies

Türkiye . 922 parts In-Stock

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922

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Kepictronics

USA . 627 parts In-Stock

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627

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SupplyDigital Components

Austria . 479 parts In-Stock

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479

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Overview

Looking for a reliable and high-quality Small Signal Bipolar Junction Transistor (BJT)? Look no further than the SPZT2907AT1G by Onsemi. With its PNP polarity, single configuration, and switching application, this transistor is perfect for a variety of electronic projects. Its small outline package and gull wing terminals make it easy to work with, while its maximum operating temperature of 150°C ensures durability. Trust Onsemi's reputation for excellence and upgrade your designs with the SPZT2907AT1G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into existing circuit designs that require PNP transistors.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient performance in these scenarios.

Surface Mount: YES

The surface mount capability makes it easy to mount and solder onto PCBs, saving space and simplifying assembly.

Maximum Power Dissipation (Abs): 1.5 W

With a high power dissipation rating, this transistor can handle higher loads and prevent overheating.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without sacrificing performance, making it suitable for a variety of environments.

Maximum Collector-Emitter Voltage: 60 V

The high voltage rating allows for a wide range of applications that require higher voltage handling capabilities.

Nominal Transition Frequency (fT): 200 MHz

The high transition frequency ensures fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SPZT2907AT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

100 ns

Maximum Turn On Time (ton):

45 ns

Trade Compliance

SPZT2907AT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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