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SPZT751T1G

Onsemi

SPZT751T1G by Onsemi

SPZT751T1G by Onsemi is a PNP BJT with max IC of 2A and fT of 75MHz. With 0.8W power dissipation, it's ideal for high-speed switching applications in electronics due to its single configuration and surface-mount capability. Operating up to 150°C, it ensures reliable performance in various temperature conditions.

Median Price

$0.442

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 764 parts In-Stock

1+ parts

$1.380

100+ parts

$0.576

1k+ parts

$0.358

10k+ parts

-

764

$1.380

$0.576

$0.358

-

DigiKey

USA . 280 parts In-Stock

1+ parts

$1.460

100+ parts

$0.610

1k+ parts

$0.409

10k+ parts

$0.375

280

$1.460

$0.610

$0.409

$0.375

Future Electronics

Canada . 13,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.375

10k+ parts

$0.355

13,000

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-

$0.375

$0.355

Rochester

USA . 9,465 parts In-Stock

1+ parts

-

100+ parts

$0.426

1k+ parts

$0.353

10k+ parts

$0.315

9,465

-

$0.426

$0.353

$0.315

Verical

USA . 8,726 parts In-Stock

1+ parts

-

100+ parts

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$0.442

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8,726

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-

$0.442

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Distributors (In-Stock)

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Digiode

USA . 2,174 parts In-Stock

1+ parts

$0.331

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-

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2,174

$0.331

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Vyrian

USA . 114 parts In-Stock

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$0.348

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114

$0.348

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Chip Stock

USA . 66,500 parts In-Stock

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66,500

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Cyclops Electronics Ltd

UK . 17,670 parts In-Stock

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17,670

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IBS Electronics

USA . 17,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.390

10k+ parts

$0.377

17,000

-

-

$0.390

$0.377

NAC Semi

USA . 14,000 parts In-Stock

1+ parts

-

100+ parts

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$0.500

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14,000

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-

$0.500

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Flip Electronics

USA . 1,000 parts In-Stock

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1,000

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Distributors (Availability)

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Corphita

USA . 1,299 parts In-Stock

1+ parts

$0.313

100+ parts

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1,299

$0.313

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Corohmni

South Africa . 442 parts In-Stock

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$0.348

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442

$0.348

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Perfect Parts

USA . 289,027 parts In-Stock

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289,027

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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90,000

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Authorized Procurement Solutions

USA . 53,000 parts In-Stock

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GreenTree Electronics

Israel . 22,014 parts In-Stock

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22,014

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ChipstoGo Electronic ltd

UK . 20,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 12,599 parts In-Stock

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SupplyDigital Components

Austria . 7,528 parts In-Stock

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7,528

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TANS Electronics

Latvia . 5,698 parts In-Stock

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Kulean Microsystems

USA . 3,434 parts In-Stock

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Lixinc

USA . 3,404 parts In-Stock

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Kepictronics

USA . 2,000 parts In-Stock

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Problanco Electronics

Mexico . 1,919 parts In-Stock

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UHIMA Technologies

Türkiye . 847 parts In-Stock

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847

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Overview

Discover the SPZT751T1G by Onsemi, a high-quality PNP small signal bipolar junction transistor perfect for a variety of applications. With a maximum operating temperature of 150°C and a nominal transition frequency of 75 MHz, this transistor offers reliable performance and efficiency. Whether you're working on audio amplifiers, voltage regulators, or switching circuits, the SPZT751T1G provides the value and benefits you need to succeed in your projects. Trust Onsemi's expertise and innovation to deliver top-notch components for your electronic designs.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this product versatile and suitable for various circuit designs.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces component count, making it easier to implement in electronic devices.

Surface Mount: YES

Surface mount packaging allows for easy integration onto PCBs, saving space and facilitating automated assembly processes.

Maximum Power Dissipation (Abs): 0.8 W

With a maximum power dissipation of 0.8W, this transistor can handle moderate power levels, making it suitable for a wide range of applications.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures stable and reliable amplification in electronic circuits, providing consistent performance.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand elevated temperatures, making it ideal for industrial applications.

Maximum Collector Current (IC): 2 A

A maximum collector current of 2A allows the transistor to handle high currents, making it suitable for power control applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance, ensuring reliable connections in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds helps prevent overheating during the soldering process, ensuring the reliability of the component.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C allows for high-temperature soldering, ensuring a strong and durable connection to the PCB.

Nominal Transition Frequency (fT): 75 MHz

With a nominal transition frequency of 75 MHz, this transistor can switch between on and off states quickly, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SPZT751T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Nominal Transition Frequency (fT):

Trade Compliance

SPZT751T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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