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SPZT651T1G

Onsemi

SPZT651T1G by Onsemi

SPZT651T1G by Onsemi is a NPN BJT with max IC of 2A and fT of 75MHz. With hFE min of 40, it's ideal for applications requiring high power dissipation up to 0.8W in surface mount configurations at temperatures up to 150°C.

Median Price

$0.910

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 776 parts In-Stock

1+ parts

$1.380

100+ parts

$0.572

1k+ parts

$0.409

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776

$1.380

$0.572

$0.409

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DigiKey

USA . 262 parts In-Stock

1+ parts

$1.380

100+ parts

$0.576

1k+ parts

$0.409

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$0.315

262

$1.380

$0.576

$0.409

$0.315

Rochester

USA . 58,000 parts In-Stock

1+ parts

-

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$0.425

1k+ parts

$0.353

10k+ parts

$0.315

58,000

-

$0.425

$0.353

$0.315

Verical

USA . 36,000 parts In-Stock

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$0.441

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$0.393

36,000

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-

$0.441

$0.393

Distributors (In-Stock)

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Digiode

USA . 1,496 parts In-Stock

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$0.332

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$0.332

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Nova Conductors

Japan . 42 parts In-Stock

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$0.397

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42

$0.397

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Vyrian

USA . 19,605 parts In-Stock

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IBS Electronics

USA . 11,000 parts In-Stock

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$0.435

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$0.416

11,000

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$0.435

$0.416

NAC Semi

USA . 4,000 parts In-Stock

1+ parts

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$0.558

10k+ parts

$0.515

4,000

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$0.558

$0.515

Flip Electronics

USA . 3,000 parts In-Stock

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3,000

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Cyclops Electronics Ltd

UK . 830 parts In-Stock

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830

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Distributors (Availability)

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Ampacity Inc.

Singapore . 23,609 parts In-Stock

1+ parts

$0.281

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23,609

$0.281

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Corphita

USA . 1,327 parts In-Stock

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$0.314

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1,327

$0.314

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Corohmni

South Africa . 307 parts In-Stock

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$0.330

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307

$0.330

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Component Stockers USA

USA . 43,391 parts In-Stock

1+ parts

$0.360

100+ parts

$0.330

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$0.300

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$0.300

43,391

$0.360

$0.330

$0.300

$0.300

Aranea Global

USA . 500 parts In-Stock

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$0.389

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$0.373

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500

$0.389

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$0.373

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Argo Parts USA

USA . 5,203 parts In-Stock

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$0.397

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$0.385

5,203

$0.397

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$0.385

GreenTree Electronics

Israel . 200,000 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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Problanco Electronics

Mexico . 6,290 parts In-Stock

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RC Electronics

USA . 6,210 parts In-Stock

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TANS Electronics

Latvia . 5,312 parts In-Stock

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Kulean Microsystems

USA . 4,651 parts In-Stock

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Perfect Parts

USA . 4,157 parts In-Stock

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Lixinc

USA . 3,125 parts In-Stock

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Kepictronics

USA . 1,225 parts In-Stock

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SupplyDigital Components

Austria . 1,100 parts In-Stock

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Continental Prestige Electronics

USA . 1,000 parts In-Stock

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$0.420

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1,000

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$0.420

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iodParts Technologies Inc.

India . 720 parts In-Stock

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UHIMA Technologies

Türkiye . 253 parts In-Stock

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Overview

Unlock the potential of your electronic designs with the SPZT651T1G Small Signal Bipolar Junction Transistor from Onsemi. Known for their high-quality components, Onsemi delivers reliable performance and durability. Ideal for a variety of applications, this NPN transistor offers a maximum collector current of 2A and a nominal transition frequency of 75 MHz. With a sleek surface mount design and a maximum power dissipation of 0.8W, this transistor is built to optimize efficiency and functionality in your projects. Trust Onsemi to provide the value and innovation you need for success.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and switching applications, offering high efficiency and reliability.

Configuration: SINGLE

Single configuration allows for easy integration into circuits and simplifies circuit design.

Surface Mount: YES

Surface mount capability enables compact and space-saving designs, ideal for modern electronics.

Maximum Power Dissipation (Abs): 0.8 W

High maximum power dissipation allows for handling of moderate power levels, making it versatile for various applications.

Minimum DC Current Gain (hFE): 40

With a minimum DC current gain of 40, this transistor provides good amplification capabilities in circuits.

Maximum Operating Temperature: 150 °C

Operating temperature up to 150°C ensures stable performance even in demanding environmental conditions.

Maximum Collector Current (IC): 2 A

High maximum collector current rating allows for handling higher current loads, increasing the versatility of the transistor.

Terminal Finish: MATTE TIN

Matte tin finish ensures good solderability and reliability in soldering processes, leading to durable connections.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature reduces thermal stress on the component during assembly processes, enhancing reliability.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, the transistor can withstand high-temperature soldering processes without degradation.

Nominal Transition Frequency (fT): 75 MHz

High nominal transition frequency of 75 MHz indicates good high-frequency response, suitable for high-speed circuit applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SPZT651T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Nominal Transition Frequency (fT):

Trade Compliance

SPZT651T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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