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SPZT651T3G

Onsemi

SPZT651T3G by Onsemi

SPZT651T3G by Onsemi is a NPN BJT transistor with max VCEsat of 0.5V, IC of 2A, and hFE of 40. It is used in applications requiring small signal amplification in automotive electronics due to AEC-Q101 standard compliance and high transition frequency of 75MHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,290 parts In-Stock

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Digiode

USA . 1,261 parts In-Stock

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Kulean Microsystems

USA . 5,355 parts In-Stock

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Problanco Electronics

Mexico . 5,017 parts In-Stock

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TANS Electronics

Latvia . 3,979 parts In-Stock

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SupplyDigital Components

Austria . 2,536 parts In-Stock

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Corphita

USA . 2,168 parts In-Stock

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UHIMA Technologies

Türkiye . 318 parts In-Stock

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Corohmni

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Overview

Discover the SPZT651T3G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, known for their cutting-edge technology and superior products, this NPN transistor is perfect for a wide range of applications. With a low VCEsat, high DC current gain, and dual terminal position, this transistor delivers value and efficiency to customers looking for a reliable solution. Whether you're working on automotive electronics or industrial controls, the SPZT651T3G is the ideal choice for your project. Experience the benefits of this high-quality component today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and durability, making it suitable for various applications.

Polarity or Channel Type: NPN

Commonly used type of transistor with high efficiency and reliability in amplification circuits.

Configuration: SINGLE

Simplifies circuit design and integration due to single configuration.

Surface Mount: YES

Enables easy and efficient PCB assembly in modern electronics.

Maximum VCEsat: 0.5 V

Low saturation voltage helps in reducing power dissipation and improving efficiency.

Package Shape: RECTANGULAR

Compact shape for space-efficient PCB layout.

Terminal Form: GULL WING

Provides secure soldering connection for surface mount applications.

No. of Terminals: 4

Sufficient connections for versatile circuit configurations.

Maximum Power Dissipation (Abs): 0.8 W

Handles moderate power levels effectively.

Package Style (Meter): SMALL OUTLINE

Compact package size for space-constrained applications.

Minimum DC Current Gain (hFE): 40

Consistent gain for accurate signal amplification.

Maximum Operating Temperature: 150 °C

Can operate reliably in high temperature environments.

Maximum Collector-Emitter Voltage: 60 V

Suitable for various voltage requirements in circuits.

Transistor Element Material: SILICON

High-performance material with good thermal properties.

Maximum Collector Current (IC): 2 A

Able to handle higher current levels for demanding applications.

Terminal Position: DUAL

Allows flexibility in connecting external components.

Case Connection: COLLECTOR

Ease of connection to collector terminal for efficient circuit design.

Reference Standard: AEC-Q101

Meets automotive quality and reliability standards.

Nominal Transition Frequency (fT): 75 MHz

Provides high frequency response for fast switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SPZT651T3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

SPZT651T3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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