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SPZT2222AT1G

Onsemi

SPZT2222AT1G by Onsemi

SPZT2222AT1G by Onsemi is a NPN BJT transistor for switching applications. It has a max VCEsat of 1V, hFE of 40, and can handle up to 0.6A IC. With a max operating temp of 150°C, it's ideal for small outline packages in high-frequency circuits.

Median Price

$0.279

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 900 parts In-Stock

1+ parts

$0.932

100+ parts

$0.886

1k+ parts

$0.886

10k+ parts

-

900

$0.932

$0.886

$0.886

-

Flip Electronics (Authorized)

USA . 40,000 parts In-Stock

1+ parts

-

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-

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-

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40,000

-

-

-

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Verical

USA . 7,000 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.163

7,000

-

-

-

$0.163

Farnell

UK . 9 parts In-Stock

1+ parts

-

100+ parts

$0.249

1k+ parts

$0.170

10k+ parts

-

9

-

$0.249

$0.170

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Element14

Singapore . 9 parts In-Stock

1+ parts

-

100+ parts

$0.309

1k+ parts

$0.279

10k+ parts

-

9

-

$0.309

$0.279

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 578 parts In-Stock

1+ parts

$0.316

100+ parts

-

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-

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578

$0.316

-

-

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Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$0.320

100+ parts

-

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-

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15

$0.320

-

-

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Flip Electronics

USA . 33,000 parts In-Stock

1+ parts

-

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33,000

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Vyrian

USA . 9,691 parts In-Stock

1+ parts

-

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9,691

-

-

-

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IBS Electronics

USA . 7,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.273

10k+ parts

$0.242

7,000

-

-

$0.273

$0.242

Sensible Micro Corp

USA . 5,479 parts In-Stock

1+ parts

-

100+ parts

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5,479

-

-

-

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ComSIT Distribution GmbH

Germany . 3,617 parts In-Stock

1+ parts

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3,617

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-

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ComSIT USA

USA . 3,617 parts In-Stock

1+ parts

-

100+ parts

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3,617

-

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 10,022 parts In-Stock

1+ parts

$0.114

100+ parts

$0.111

1k+ parts

$0.111

10k+ parts

-

10,022

$0.114

$0.111

$0.111

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Ampacity Inc.

Singapore . 9,856 parts In-Stock

1+ parts

$0.114

100+ parts

-

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-

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9,856

$0.114

-

-

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Corohmni

South Africa . 451 parts In-Stock

1+ parts

$0.134

100+ parts

-

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-

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451

$0.134

-

-

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Corphita

USA . 1,622 parts In-Stock

1+ parts

$0.300

100+ parts

-

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-

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1,622

$0.300

-

-

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Argo Parts USA

USA . 971 parts In-Stock

1+ parts

$0.320

100+ parts

-

1k+ parts

-

10k+ parts

$0.310

971

$0.320

-

-

$0.310

Component Stockers USA

USA . 54,974 parts In-Stock

1+ parts

$0.440

100+ parts

$0.290

1k+ parts

$0.150

10k+ parts

$0.130

54,974

$0.440

$0.290

$0.150

$0.130

Continental Prestige Electronics

USA . 1,089 parts In-Stock

1+ parts

$0.519

100+ parts

$0.346

1k+ parts

$0.185

10k+ parts

$0.177

1,089

$0.519

$0.346

$0.185

$0.177

Advanced Electronics

New Zealand . 900 parts In-Stock

1+ parts

$0.932

100+ parts

$0.886

1k+ parts

$0.886

10k+ parts

-

900

$0.932

$0.886

$0.886

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Aztec Data Supply Inc.

USA . 191 parts In-Stock

1+ parts

$1.288

100+ parts

-

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-

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191

$1.288

-

-

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Problanco Electronics

Mexico . 7,396 parts In-Stock

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7,396

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Kulean Microsystems

USA . 7,329 parts In-Stock

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7,329

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SupplyDigital Components

Austria . 7,021 parts In-Stock

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7,021

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Perfect Parts

USA . 2,240 parts In-Stock

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2,240

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UHIMA Technologies

Türkiye . 548 parts In-Stock

1+ parts

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548

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Robosynatics

Brazil . 150 parts In-Stock

1+ parts

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100+ parts

$0.176

1k+ parts

$0.176

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$0.176

150

-

$0.176

$0.176

$0.176

Lucentia Tech

USA . 150 parts In-Stock

1+ parts

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100+ parts

$0.176

1k+ parts

$0.176

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$0.176

150

-

$0.176

$0.176

$0.176

TANS Electronics

Latvia . 105 parts In-Stock

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105

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Netroflash

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$0.314

1k+ parts

$0.304

10k+ parts

$0.298

50

-

$0.314

$0.304

$0.298

Overview

Unleash the power of innovation with the SPZT2222AT1G by Onsemi, a top-tier manufacturer known for delivering premium quality small signal bipolar junction transistors. Ideal for switching applications, this NPN transistor offers unparalleled performance and reliability. With a maximum VCEsat of 1V and a minimum DC current gain of 40, this transistor provides efficiency and precision in various electronic devices. Experience seamless integration with its gull wing terminal form and compact rectangular package shape. Elevate your projects to new heights with the Onsemi SPZT2222AT1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability and durability.

Polarity or Channel Type: NPN

Commonly used for amplification and switching applications, making it versatile in various circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such circuits.

Maximum VCEsat: 1 V

Low VCEsat value indicates low saturation voltage, resulting in minimal power loss during operation.

Maximum Collector-Emitter Voltage: 40 V

With a high Vce rating, this transistor can handle higher voltages, making it suitable for various applications.

Minimum DC Current Gain (hFE): 40

Higher hFE value indicates better current gain, essential for amplification and signal processing.

Maximum Power Dissipation (Abs): 1.5 W

High power dissipation capability allows the transistor to handle larger loads without overheating.

Max Operating Temperature: 150 °C

Wide operating temperature range ensures stability and performance in a variety of environmental conditions.

Surface Mount: YES

Surface mount capability makes installation easier and saves space on the circuit board.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency indicates fast switching speeds, crucial for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SPZT2222AT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

8 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Maximum VCEsat:

1 V

Trade Compliance

SPZT2222AT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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