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SPI336-89

Onsemi

SPI336-89 by Onsemi

SPI336-89 by Onsemi is a Linear Position Sensor with Max VCEsat of 1.2V, Darlington Output Circuit Type, and Operating Temperature range from -20 °C to 80°C. Ideal for THROUGH HOLE MOUNT applications with Gap Size of 0.0016mm, it offers Max Output Voltage of 2V and Operating Current up to 50mA.

Median Price

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Lifecycle Status

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Vyrian

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Digiode

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SupplyDigital Components

Austria . 8,360 parts In-Stock

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Problanco Electronics

Mexico . 5,043 parts In-Stock

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Kulean Microsystems

USA . 2,559 parts In-Stock

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Corphita

USA . 1,762 parts In-Stock

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UHIMA Technologies

Türkiye . 631 parts In-Stock

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TANS Electronics

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Corohmni

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Overview

Enhance the precision and efficiency of your linear position sensing applications with the SPI336-89 by Onsemi. Manufactured by a trusted industry leader, this sensor offers unparalleled quality and reliability. Ideal for a wide range of applications, this sensor provides accurate and consistent measurements. With a low VCEsat and Darlington output circuit type, it ensures optimal performance even in challenging environments. Trust Onsemi's expertise and experience to deliver value and excellence in every use of the SPI336-89.

Feature Benefit Bullets

Maximum VCEsat: 1.2 V

Low VCEsat ensures efficient operation and minimal power loss, making this linear position sensor energy efficient.

Output Circuit Type: Darlington

Darlington output circuit offers high gain and sensitivity, providing accurate and reliable measurement of linear position.

Maximum Operating Temperature: 80 °C

With a high maximum operating temperature, this linear position sensor can perform reliably even in demanding industrial environments.

Minimum Operating Temperature: -20 °C

The wide range of operating temperature allows this sensor to be used in both cold and hot conditions without any issues.

Maximum Output Voltage: 2 V

The high maximum output voltage ensures that the sensor can provide a strong signal for accurate position detection.

Maximum Operating Current: 50 mA

The low operating current requirement makes this sensor energy efficient and reduces the overall power consumption.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mount provides a secure and stable installation, ensuring the sensor stays in place during operation.

Gap Size: 0.0016 mm

The small gap size allows the sensor to detect even the slightest movements accurately, making it ideal for precise linear position measurements.

Technical Specifications

Linear Position Sensors SPI336-89 attributes and parameters. Explore more Linear Position Sensors devices from Onsemi

Specs

Gap Size:

.0016 mm

Mounting Feature:

No. of Channels:

1

Maximum Operating Current:

50 mA

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-20 Cel

Output Circuit Type:

Darlington

Maximum Output Voltage:

2 V

Sub-Category:

Position, Linear, Photoelectric Sensors

Maximum VCEsat:

1.2 V

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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